Abstract:Titanium sapphire is one of the most important laser crystals suitable for widely tunable and ultrashort pulsed lasers with high gain and high power outputs, but its performance is limited by the residual infrared absorption at the operation wavelength region of the laser. Although studies have been made over decades in improving the laser performance and the solutions to eliminate this residual absorption, there still remain some controversies for the binding tendency and charge-transfer transition energy of Ti related pairs, which is supposed to be the culprit of this residual absorption. In this paper, we clarify that previously predicted strong binding tendencies in Ti3+-Ti3+ and Ti3+-Ti4+ pairs should be artificial and are blamed on the intrinsic delocalization error in general approximate density functionals. We show that such errors can be eliminated by Hubbard U corrected generalized-gradient-approximation method with 4≤U≤5eV or hybrid density functionals such like HSE06 and PBE0, which approximately satisfy the generalized Koopmans' condition. Our calculations reveal that the equilibrium geometry and electronic structure of Ti3+-Ti4+ pairs can be Ti3+-Ti4+-type or Ti3.5+-Ti3.5+-type configurations with very small energy differences (≲0.1eV), and both of them have residual infrared absorption, which are predicted to be about three orders of magnitude stronger in oscillator strength per defect than the pump absorption of Ti3+ dopants. Regarding Ti3+-Ti3+ pairs, it is shown that they do not contribute to the residual infrared absorption in the wavelength range of laser operation, but their charge-transfer transitions can explain the residual UV band at 270 nm and E band at 400 nm in the absorption spectra of Ti:Al2O3 crystals. Furthermore, the charge-transfer transition energies and Stokes shift of Ti4+ and ionization energies for Ti3+ are also well interpreted by our calculations. The calculation method developed together with the predicted optical properties forms the basis for exploration on eliminating the residual infrared absorption in titanium sapphire.

Concentration dependent fluorescent characteristics of Ti3 ion doped sapphire crystal

Concentration dependent spectral distortion of Ti:Al2O3 crystals

Concentration quenching of Ti: Al2O3 crystal and mechanism of energy transfer

First-principles study of Ti-doped sapphire. I. Formation and optical transition properties of titanium pairs

Effect of Irradiation on Ti-Doped Sapphire by Excimer Laser

EFFECT OF IRRADIATION ON Ti-DOPED SAPPHIRE BY TWO DIFFERENT KINDS OF LASER

Absorption Spectra and Electron-Vibration Coupling of Ti:Sapphire from First Principles

Temperature Dependence of the Fluorescence Emission Intensity of Eu/TiO<sub>2</sub> Nanocrystals

High energy He+ ion implantation in titanium doped sapphire crystal

Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glass

Temperature Dependence Of The Fluorescence Emission Intensity Of Eu/Tio2 Nanocrystals

Spectroscopic Properties of TmF3-Doped CaF2 Crystals

Investigation on the Origin of the Blue Emission in Titanium-Doped Sapphire - is F+ Color-Center the Blue Emission Center

Study on Mechanism Controlling 5 D 3 / 5 D 4 Emissions of Tb 3+ in Glasses

Structural Changes of Tio2 Gel Using Eu3+ Ion As the Fluorescence Probe

Influence Of Cr3+ Concentration On The Spectroscopy And Laser Performance Of Cr,Er:Ysgg Crystal

Time-Resolved Fluorescence-Spectra of Titanium-Containing Fluorophosphate Glass

Influence of Ce3+ ion on the spectroscopic properties of Er3+-doped tellurite glass

Gemmological Characteristics and Diffusion Mechanism of Diffusion-treated Synthetic Sapphire

Concentration Dependence of Dy3+:1.3 Μm Luminescence in Ge–Ga–Sb–Se Glasses

Gd3+-sensitized Tb3+-doped Scintillating Silicate Glasses