Abstract:In this study, we revisit the oxidation reactions of a single-crystal silicon wafer and compare the reported crystal structures of the formed oxides with the original diamond structure of single-crystal silicon. It is commonly assumed that interstitial silicon atoms are always emitted during oxidation at the reactive interface between silicon and the formed oxide due to volume differences. However, it is important to acknowledge that this phenomenon may not always be observed. Thermal equilibrium studies have revealed that a certain percentage of silicon atoms in the diamond structure remains even after surface oxidation [Kamiyama and Sueoka, J. Appl. Phys. 134, 115301 (2023)]. These retained silicon atoms undergo a transformation into a different crystal structure, presenting as β-cristobalite (space group: P41212) rather than the anticipated non-ideal cristobalite (space group: Fd-3m). Our ab initio calculations indicated that the latter remains stable next to a quartz-based structure, exhibiting optimal compatibility with the Si (001) surface. This quartz-based structure is formed through the emission of a Si atom during the oxidation of single-crystal silicon, finally forming a quartz/Si (001) interface. Therefore, we propose a coexisting model involving an alternative β-cristobalite and a quartz crystal structure originating from the surface oxidation of single-crystal silicon. This model offers an explanation for why thermally oxidized films derived from single-crystal silicon exhibit an amorphous nature. In addition, studies have revealed that the oxide precipitates observed in Si crystals are cristobalite and coesite. Hence, the qualitative differences in SiO2/Si interfaces between surface and internal oxidations in metal-gettering effectivity shown in experimental literature require clarification. We also discuss the conditions that prevent the emission of Si atoms.

XPS study of silicon oxide film and partial parameter fixed curve fitting

A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

Infrared Absorption Properties of Si— O —Si Bonds in Plasma-deposited Amorphous SiOx∶H Films

Properties of plasma-deposited amorphous SiO2 films

Study of plasma-deposited amorphous SiO2 films using infrared absorption techniques

A Study of PECVD Amorphous SiO2 Films Using Infrared Absorption Techniques

Properties of "stoichiometric" Silicon Oxynitride Films

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

Structures and absorption optical spectra of silicon cluster Si 9 via first-principles calculations

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

XPS Analysis of Silicon Oxycarbide Formed on the Surface of Rf-Sputter Deposited SiC Thin Films

Optical Absorption Property of Oxidized Free-Standing Porous Silicon Films

Revisiting single-crystal silicon oxidation: A comprehensive analysis of crystal structural transformation to SiO2

An Investigation of the Properties of Silicon Oxide Prepared by Oxidation of Silicon in Chlorine-Containing Ambients at 850°C

AN INTERFACE KINETICS STUDY OF OXIDATION PROCESS OF SILICON

FT-IR study of silicon dioxide films fabricated by rapid thermal oxidation

Optical Properties of SiOx Film on Aluminum Substrate Prepared by APCVD

Ellipsometric Study of the Optical Properties of Silicon-Based Si : Sio2 Composite Thin Films under Different Annealing Temperatures

Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice