A Hierarchical Model For Characterising Spatial Wafer Variations

Lulu Bao,Kaibo Wang,Ran Jin
DOI: https://doi.org/10.1080/00207543.2013.849389
IF: 9.018
2014-01-01
International Journal of Production Research
Abstract:Silicon wafers are commonly used materials in the semiconductor manufacturing industry. Their geometric quality directly affects the production cost and yield. Therefore, improvement in the quality of wafers is critical for meeting the current competitive market needs. Conventional summary metrics such as total thickness variation, bow and warp can neither fully reflect the local variability within each wafer nor provide useful insight for root cause diagnosis and quality improvement. The advancement of sensing technology enables two-dimensional (2D) data mapping to characterise the geometric shapes of wafers, which provides more information than summary metrics. The objective of this research is to develop a statistical model to characterise the thickness variation of wafers based on 2D data maps. Specifically, the thickness variation of wafers is decomposed into macro-scale and micro-scale variations, which are modelled as a cubic curve and a first-order intrinsic Gaussian Markov random field, respectively. The models can successfully capture both the macro-scale mean trend and the micro-scale local variation, with important engineering implications for process monitoring, fault diagnosis and run-to-run control. A practical case study from a wafer manufacturing process is performed to show the effectiveness of the proposed methodology.
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