Abstract:Hexagonal boron nitride (h-BN) is crucial for many applications, and its synthesis over a large area with high quality is strongly desired. A promising approach to synthesize h-BN is chemical vapor deposition on transition metal catalysts, in which the alignments of BN clusters in the initial growth determine both the types and the amounts of defects in h-BN. In the search for a better catalyst, we systematically studied the interactions between h-BN clusters and various metal surfaces. Our results show that the clusters on nearly all catalyst surfaces, no matter whether the (111) facets of face-centered cubic (FCC) metals or the (0001) facets of hexagonal close packed (HCP) metals, have two local minima with opposite orientations. During the initial growth, h-BN clusters adopt the energy-favored sites, whose registry is well preserved upon further growth owing to the strong interaction between the edge atoms of h-BN and the underlying substrates. On FCC(111), the h-BN domains are always aligned in parallel orientations, while on HCP(0001) they are parallel on the same terrace and anti-parallel on neighboring terraces. Beyond this, on the (111) surfaces of Ir and Rh, the BhNt configuration is much more energy favorable than BfNt, where, the subscripts h, t, and f represent the adsorption sites, hcp, top and fcc, respectively. Thus, Ir(111) and Rh(111) might promote the growth of h-BN domains with the same alignments, which will greatly improve the quality of h-BN by reducing the possibility of formation of grain boundaries.

Controllable Co‐segregation Synthesis of Wafer‐Scale Hexagonal Boron Nitride Thin Films

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

Thickness-Controlled Synthesis of Uniform Hexagonal Boron Nitride Films on Metal Alloys by Chemical Vapor Deposition

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Hexagonal Boron Nitride Growth on Cu-Si Alloy: Morphologies and Large Domains.

Controlling the Orientations of H-Bn During Growth on Transition Metals by Chemical Vapor Deposition

Direct Growth of Hbn/graphene Heterostructure Via Surface Deposition and Segregation for Independent Thickness Regulation.

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Ni Foam Assisted Synthesis of High Quality Hexagonal Boron Nitride with Large Domain Size and Controllable Thickness

A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure

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Controllable Growth of Triangular Hexagonal Boron Nitride Domains on Copper Foils by an Improved Low-Pressure Chemical Vapor Deposition Method

Large-Area Orientation-Controlled Growth of Hexagonal Boron Nitride on Liquid Copper

Formation of Monolayer and Few-Layer Hexagonal Boron Nitride Nanosheets Via Surface Segregation

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Liquid-Phase Exfoliation of Hexagonal Boron Nitride into Boron Nitride Nanosheets in Common Organic Solvents with Hyperbranched Polyethylene as Stabilizer

Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

Preparation of Thin-Layered Hexagonal Boron Nitride Nanosheet with Oxygen Doping