Abstract:In recent years, many metal oxides have been rigorously studied to be employed as solid electrolytes for resistive switching (RS) devices. Among these solid electrolytes, lanthanum oxide (La2 O3 ) is comparatively less explored for RS applications. Given this, the present work focuses on the electrodeposition of La2 O3 switching layers and the investigation of their RS properties for memory and neuromorphic computing applications. Initially, the electrodeposited La2 O3 switching layers are thoroughly characterized by various analytical techniques. The electrochemical impedance spectroscopy (EIS) and Mott-Schottky techniques are probed to understand the in situ electrodeposition, RS mechanism, and n-type semiconducting nature of the fabricated La2 O3 switching layers. All the fabricated devices exhibit bipolar RS characteristics with excellent endurance and stable retention. Moreover, the device mimics the various bio-synaptic properties such as potentiation-depression, excitatory post-synaptic currents, and paired-pulse facilitation. It is demonstrated that the fabricated devices are non-ideal memristors based on double-valued charge-flux characteristics. The switching variation of the device is studied using the Weibull distribution technique and modeled and predicted by the time series analysis technique. Based on electrical and EIS results, a possible filamentary-based RS mechanism is suggested. The present results assert that La2 O3 is a promising solid electrolyte for memory and brain-inspired applications.

Nanoscale Electrochemical Metallization Memories Based on Amorphous (la, Sr) Mno3 Using Ultrathin Porous Alumina Masks

CuAg/Al 2 O 3 /cuag Threshold Switching Selector for RRAM Applications

Amporphous La0.75Sr0.25MnO3 Thin Film Fabricated by Pulsed Laser Deposition as a Medium Layer for Semi-transparent Resistive Random Access Memory

1T MoS2/CoS2 Heterostructures Enabling Enhanced Resistive Switching Behavior in Sodium Alginate-based Flexible Memristors

Cu x S nanosheets with controllable morphology and alignment for memristor devices

Enhanced Resistive Switching Characteristics in Al2O3 Memory Devices by Embedded Ag Nanoparticles.

Nanoscale Topotactic Phase Transformation in SrFeO x Epitaxial Thin Films for High-Density Resistive Switching Memory.

Enhanced Resistive Switching Characteristics of FeMnO3 Resistive Random Access Memory Devices with Embedding Au Nanoparticles

Low-cost Fabrication and Polar-Dependent Switching Uniformity of Memory Devices Using Alumina Interfacial Layer and Ag Nanoparticle Monolayer

Self-Assembled Lanthanum Oxide Nanoflakes by Electrodeposition Technique for Resistive Switching Memory and Artificial Synaptic Devices

The Growth Of Metallic Nanofilaments In Resistive Switching Memory Devices Based On Solid Electrolytes

Self-Formed Conductive Nanofilaments in (bi, Mn)O-X for Ultralow-Power Memory Devices

Facile Hydrothermal Synthesis and Resistive Switching Mechanism of the α-Fe2O3 Memristor

Mechanism For Resistive Switching In An Oxide-Based Electrochemical Metallization Memory

Enhanced Short-Term Memory Plasticity of WOx-Based Memristors by Inserting AlOx Thin Layer

Dual Buffer Layers for Developing Electrochemical Metallization Memory With Low Current and High Endurance

Emulation of Learning and Memory Behaviors by Memristor Based on Ag Migration on 2D MoS 2 Surface

Electrochemical metallization cell with anion supplying active electrode

Enhanced resistance switching in ultrathin Ag/SrTiO 3 /(La,Sr)MnO 3 memristors and their long-term plasticity for neuromorphic computing

Nanoscale-Thick La 0.7 Sr 0.3 MnO 3 Films for Memristor Devices with Negative Differential Resistance-Coupled Resistive Switching Behavior

Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al2O3 Layer Formation: A Study on Preparation Techniques and Performance Impact