Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Morphology and structure of epitaxial graphene grown on 6H-SiC (0001) substrates by modified argon-assisted epitaxial method

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide

Epitaxial Growth of Graphene on 6H-Sic (0001) by Thermal Annealing

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Preparation of Graphene on Different-Polarity 6H-Sic Substrates and the Study of Their Electronic Structures

Identification of Dominant Scattering Mechanism in Epitaxial Graphene on Sic

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

Influence of Defects in SiC (0001) on Epitaxial Graphene

Raman spectroscopy of epitaxial graphene on a SiC substrate

Epitaxial Growth of Ultrathin Two-Dimensional Pentacene Film with Standing-Up Molecular Geometry on Nano-Size-curved Graphene Surface

In situ atomic-scale observation of monolayer graphene growth from SiC

Epitaxial Synthesis of Graphene on 4H-Sic by Microwave Plasma Chemical Vapor Deposition

Hydrogen Assisted Growth Of High Quality Epitaxial Graphene On The C-Face Of 4h-Sic

Annealing Time Dependence of Morphology and Structure of Epitaxial Graphene on 6H-SiC(0001) Surface

Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide

Temperature Dependence Of The Thickness And Morphology Of Epitaxial Graphene Grown On Sic (0001) Wafers

Atomic-scale Morphology and Electronic Structure of Manganese Atomic Layers Underneath Epitaxial Graphene on SiC(0001).

Near-free-standing Epitaxial Graphene on Rough SiC Substrate by Flash Annealing at High Temperature

Growth of Large Domain Epitaxial Graphene on the C-Face of SiC