Abstract:Hexagonal boron nitride (h-BN) has attracted significant attention due to its exceptional properties. Among various substrates used for h-BN growth, diamond emerges as a more promising substrate due to its high-temperature resistance and superior electrical properties. To reveal the nucleation mechanism of h-BN on the diamond (111) surface and the impact of hydrogenation treatment on this process, we explored the adsorption, diffusion, nucleation morphologies, and predicted nucleation pathways in this process using first-principles calculations based on density functional theory (DFT). Our results indicate that N positioned above the first layer of C and B positioned above the second layer of C enhance the stability of BN clusters. During the growth of BN clusters, there is a geometric transformation from chain-like structures to honeycomb-like structures. The proportion of unhybridized sp2 atoms within BN clusters and geometric symmetry significantly influence h-BN growth. Moreover, computational findings also suggest that to enhance the nucleation rate of h-BN it is essential to inhibit the formation of zigzag chain structures by BN clusters during the early stages of nucleation on a clean diamond surface. Additionally, hydrogenation treatment decreases the binding affinity of B and N on the substrate, facilitating atomic diffusion, and has been identified as an effective approach to facilitate nucleation. Furthermore, hydrogen-terminated diamond acts as an electron donor in the system, which profoundly affects the morphology of growing h-BN and the characteristics of the h-BN/diamond heterostructures. These conclusions are important to understanding and optimizing h-BN growth on diamond and provide a theoretical basis of the construction and application of the h-BN/diamond heterostructure.

Role of Hydrogen in the Growth of Boron Nitride: Cubic Phase Versus Hexagonal Phase

Nucleation Mechanism of Hexagonal Boron Nitride on Diamond (111) and Its Hydrogen-Terminated Surface: A DFT Study

Controlling the Orientations of H-Bn During Growth on Transition Metals by Chemical Vapor Deposition

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Hydrogen-driven boron nitride phase differentiation during the epitaxial nucleation on the diamond (001) surface

Impact of Hydrogenation on the Stability and Mechanical Properties of Amorphous Boron Nitride

Morphology, Ordering, Stability, and Electronic Structure of Carbon‐Doped Hexagonal Boron Nitride

Hexagonal Boron Nitride Growth on Cu-Si Alloy: Morphologies and Large Domains.

Atomistic insights into the nucleation and growth of hexagonal boron nitride and graphene heterostructures

Missing links towards understanding equilibrium shapes of hexagonal boron nitride: algorithm, hydrogen passivation, and temperature effects

Direct Observation of Site-Selective Hydrogenation and Spin-Polarization in Hydrogenated Hexagonal Boron Nitride on Ni(111).

Exploring h-BN as a hydrogen conductor and depository

Nucleation of cubic boron nitride on boron-doped diamond via plasma enhanced chemical vapor deposition

Revealing the nucleation mechanism of CVD-prepared hexagonal boron nitride on transition metal surfaces: A study from DFT calculations

Understanding vapor phase growth of hexagonal boron nitride

The Effects of Boron and Hydrogen on the Embrittlement of Polycrystalline Ni(3)Al

First-principles Study of Interaction Between H2 Molecules and BN Nanotubes with BN Divacancies.

Dielectric spectroscopy of hydrogenated hexagonal boron nitride ceramics

Adsorption Of Hydrogen Molecules On The Platinum-Doped Boron Nitride Nanotubes

Single Crystal Growth of Millimeter-Sized Monoisotopic Hexagonal Boron Nitride

Effect of Near‐Surface Dopants on the Epitaxial Growth of H‐bn on Metal Surfaces