Abstract:Nanoparticles (NPs) have had increasingly successful applications including in emissive or photovoltaic devices; however, trap states associated with the surface of NPs often drastically reduce the efficiency of devices and are difficult to detect spectroscopically. We show the applicability of photoconduction as the means of detecting and quantifying trap states in NPs. We performed time-of-flight (ToF) photoconduction measurements, using semiconducting poly[bis(4-phenyl)(4-butyphenyl)amine] (P-TPD) doped with either core/shell CdSeS/CdS quantum dots (QDs) or perovskite CsPbBr3 NPs, both of which are carefully designed to be energetically matched. In the case of the QDs, a drop in the hole mobility from ∼10-3 to ∼10-4 cm2 V-1 s-1 was observed when compared to a control sample, suggesting the presence of a hole trapping. These trap states were found to be around -5.0 to -4.9 eV from the vacuum level. The presence of the trap states was further supported by a coincident reduction in the photoluminescence (PL), quantum yield (QY), and lifetime of the core/shell QDs after purification. Using the measured reductions in the PL, QY, and lifetime, the surface trap state density was estimated to increase by between 20 and 40%, most likely due to a ligand detachment. In the case of the perovskite NP-doped samples, a mobility of ∼10-3 cm2 V-1 s-1 was measured. Thus, doping with perovskite NPs did not generate any obvious hole trapping from the P-TPD matrix. The absence of a trapping may be related to the reduced surface-to-volume ratio and NP number density of the perovskite NPs compared to the core/shell QDs, since the perovskite NPs are approximately 10 times larger in radius than that of the core/shell QDs. Our results suggest that to minimize the presence of trap states with a view to improving device performance, large-size perovskite NPs appear to be better than small-size QDs.

Effect of Different Trap States on the Electron Transport of Photoanodes in Dye Sensitized Solar Cells

Correlation Between Energy and Spatial Distribution of Intragap Trap States in the Tio2 Photoanode of Dye-Sensitized Solar Cells

Density of state determination of two types of intra-gap traps in dye-sensitized solar cells and its influence on device performance

Zinc-Doping Effects on the Trap State Distribution and Charge Recombination in the Anode of Tio2 Dye-Sensitized Solar Cells

Effect of Cerium Doping in the TiO2 Photoanode on the Electron Transport of Dye-Sensitized Solar Cells

Effect of energetic distribution of trap states on fill factor in perovskite solar cells

Trap Suppression in Ordered Organic Photovoltaic Heterojunctions

The Influence of Hierarchical TiO2 Microspheres on the Trap State Distribution and Charge Transport/recombination Dynamics in Quantum Dot Sensitized Solar Cells

Photoelectrochemical Analysis of the Dyed Tio2/Electrolyte Interface in Long-Term Stability of Dye-Sensitized Solar Cells

Correlating Charge Transfer Dynamics with Interfacial Trap States in High-Efficiency Organic Solar Cells.

Trap Suppression in Orderly Organic Photovoltaic Heterojunction

Effects of Traps on Photo-induced Interfacial Charge Transfer of Ag-TiO2:Photoelectrochemical,Electrochemical and Spectroscopic Characterizations

Energetics of Nonradiative Surface Trap States in Nanoparticles Monitored by Time-of-Flight Photoconduction Measurements on Nanoparticle-Polymer Blends

Defect Engineering for Modulating the Trap States in 2D Photoconductors.

Resolving spatial and energetic distributions of trap states in metal halide perovskite solar cells

Charge Recombination Reduction in Dye-Sensitized Solar Cells by Depositing Ultrapure Tio2 Nanoparticles on "inert" Batio3 Films

Linking the Doping-Induced Trap States to the Concentration of Surface-Reaching Photoexcited Holes in Transition-Metal-Doped TiO2 Nanoparticles

Effect of traps on carrier transport in CdSe quantum dot thin films

Trap States in Lead Iodide Perovskites.

Impact of Surface Trap States on Electron and Energy Transfer in CdSe Quantum Dots Studied by Femtosecond Transient Absorption Spectroscopy

Suppressing the Trapping Process by Interfacial Charge Extraction in Antimony Selenide Heterojunctions