Abstract:Catalytic growth of silicon nanowires (SiNWs), mediated by metallic droplet, provide ideal quasi-1D channels to construct high performance field effect transistor (FET). However, the incorporation of catalytic metal atoms into SiNWs channels has significant impact on the FET characteristics, and thus needs to be better understood and controlled to fulfil its potential for high performance electronics. In this work, we focus on the effect of the incorporation of indium (In) catalytic atoms into planar SiNWs, grown via an in-plane solid-liquid-solid (IPSLS) mechanism, on the FET device performance. It is found that the initial high concentration of p-type In dopants in the as-grown SiNWs led to an equivalent boron (B) doping of 5x10(18) cm(-3). However, a simple step-wise annealing in oxygen at different temperatures, varied from 620 degrees C to 920 degrees C, can help to out-diffuse the dissolved In atoms into the surface SiO2 layer, and reduce the In concentrations down to <5x10(17) cm(-3), as verified by atom-probe tomography (APT) and four-point-probe measurements. This effective dopant control enables a remarkable device performance improvement of the Schottky barrier FETs, built upon an orderly array of parallel SiNWs of approximately 25 nm in diameter, where the current ratio (I-on/I-off) has been substantially boosted from 10(5) to 10(8), while the subthreshold swing (SS) reduced from 400 mV/dec down to similar to 100 mV/dec, with a hole carrier mobility increased from 10 to similar to 75 cm(2) V-1 s(-1) as extracted according to a finite element analysis. These results pave the way for the employment of the catalytic IPSLS SiNWs to serve as high quality 1D channels for high-performance SiNWs-based electronics and sensors.

Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors.

Highly Focused Femtosecond Laser Directed Selective Boron Doping in Single SiC Nanowire Device for N-P Conversion

InAs nanocrystals with robust p-type doping

Performance Improvement of Planar Silicon Nanowire Field Effect Transistors Via Catalyst Atom Doping Control

First Principles Study of P-Type Doping in SiC Nanowires: Role of Quantum Effect

Unexpected Phosphorus Doping Routine of Planar Silicon Nanowires for Integrating CMOS Logics.

InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors.

Room temperature device performance of electrodeposited InSb nanowire field effect transistors

Carbon Based High Performance Doping-Free Nanoelectronic and Optoelectronic Devices

Crystalline GaSb Nanowires Synthesized on Amorphous Substrates: from the Formation Mechanism to P-Channel Transistor Applications

Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene.

Methods for InSb nanowire manufacturing and Mn doping both based on multi-step glancing-angle deposition process

Enhanced doping efficiency of the remotely p-doped InAs/InP core-shell nanowires: A first principles study

Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors

Si Doping-Induced Phase Control, Formation of P-Type and N-Type GaAs Nanowires

Tuning The Electrical Transport Properties Of N-Type Cds Nanowires Via Ga Doping And Their Nano-Optoelectronic Applications

InAs/InP radial nanowire heterostructures as high electron mobility devices.

Single Crystalline Nitrogen-Doped InP Nanowires for Low-Voltage Field-Effect Transistors and Photodetectors on Rigid Silicon and Flexible Mica Substrates