Magnetic Instability Induced By Rh Doping In The Kondo Semiconductor Ceru2al10

Hanjie Guo,Hiroshi Tanida,Riki Kobayashi,Ikuto Kawasaki,Masafumi Sera,Takashi Nishioka,Masahiro Matsumura,Isao Watanabe,ZhuAn Xu
DOI: https://doi.org/10.1103/PhysRevB.88.115206
IF: 3.7
2013-01-01
Physical Review B
Abstract:The magnetic ground state of the Rh-doped Kondo semiconductor CeRu2Al10 [Ce(Ru1-xRhx)(2)Al-10] is investigated with the muon spin relaxation method. Muon spin precession with two frequencies is observed in the x = 0 sample, while only one frequency is present in the x = 0.05 and 0.10 samples, which is attributed to the broad static field distribution at the muon site. The internal field at the muon site is enhanced from about 180 G in the x = 0 sample to about 800 G in the Rh-doped samples, supporting the spin-flop transition as suggested by the magnetization measurement, and the boundary of different magnetic ground states is identified around x = 0.03. The drastic change of magnetic ground state by a small amount of Rh doping (3%) indicates that the magnetic structure in CeRu2Al10 is not robust and can be easily tuned by external perturbations such as electron doping. The anomalous temperature dependence of the internal field in CeRu2Al10 is suggested to be attributed to the hyperfine interaction between muons and conduction electrons.
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