Abstract:Two scattering mechanisms, including the confined electron (CE)–confined acoustic phonon (CAP) scattering and the CE–confined optical phonon (COP) scattering, have been considered in the theoretical problem of photo-stimulated thermo-magnetoelectric effects (TME) occurring in two-dimensional compositional semiconductor superlattices (CSS). The quantum kinetic equation (QKE) method is applied to calculate the characteristic quantities of two typical photo-stimulated TME, namely, the Ettingshausen effect (EE) and the Peltier effect (PE). The obtained analytical results show that the external fields (the magnetic field B , the dc electric field E , the frequency and the amplitude of the laser radiation), the period of superlattice d as well as the temperature of the systems T are quantities that govern the quantum Ettingshausen coefficient (qEC) and the quantum Peltier coefficient (qPC).The presence of m-quantum number specifying phonon confinement in the analytical expression of the qEC and the qPC is as a demonstration for the influence of size effect on both the EE and the PE. The results are numerically estimated and graphed for the CSS to indicate the dependence of the qEC and the qPC on aforementioned quantities. Moreover, the confined phonons contribute to the magneto-phonon-photon resonance condition (MPPRC) in CSS. Therefore, the behaviors of the photo-stimulated TME within phonon confinement are different from the case of bulk phonons. Due to the confinement of an acoustic phonon, the Shubnikov–de Hass oscillations are observed with the changes in the amplitude and the posture when investigating the dependence of the qEC and the qPC on the magnetic field and the frequency of the laser radiation (LR). Meanwhile, resonance peaks of these coefficients are relocated under the influence of a COP. Besides, the confinement of phonons causes the changes in the magnitude of both the qEC and the qPC compared to the case of unconfined phonons. The obtained results hold true for all temperatures and contribute to perfecting the theory of the quantum TME in the low-dimensional semiconductor systems (LDSS).

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