Abstract:Monolayer transition metal dichalcogenides $MX_2$ ($M$ = Mo,W and $X$ = Te, Se, S) in 1T' structure were predicted to be quantum spin Hall insulators based on first-principles calculations, which were quickly confirmed by multiple experimental groups. For a better understanding of their properties, in particular their responses to external fields, we construct a realistic four-band tight-binding (TB) model by combining the symmetry analysis and first-principles calculations. Our TB model respects all the symmetries and can accurately reproduce the band structure in a large energy window from -0.3 eV to 0.8 eV. With the inclusion of spin-orbital coupling (SOC), our TB model can characterize the nontrivial topology and the corresponding edge states. Our TB model can also capture the anisotropic strain effects on the band structure and the strain-induced metal-insulator transition. Moreover, we found that although $MX_2$ share the same crystal structures and have the same crystal symmetries, while the orbital composition of states around the Fermi level are qualitatively different and their lower-energy properties cannot fully described by a single k $\cdot$ p model. Thus, we construct two different types of k $\cdot$ p model for $M$S$_2$,$M$Se$_2$ and $M$Te$_2$, respectively. Benefiting from the high accuracy and simplicity, our TB and k $\cdot$ p models can serve as a solid and concrete starting point for future studies of transport, superconductivity, strong correlation effects and twistronics in 1T'-transition metal dichalcogenides.

Three-Band Tight-Binding Model For Monolayers Of Group-Vib Transition Metal Dichalcogenides

Realistic tight-binding model for monolayer transition metal dichalcogenides in 1T' structure

Deriving 2d M2x3 (M = Mo, W, X = S, Se) By Periodic Assembly Of Chalcogen Vacancy Lines In Their Mx2 Counterparts

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Tuning Band Gaps in Twisted Bilayer MoS_2

Band structure of monolayer transition-metal dichalcogenides and topological properties of their nanoribbons: Next-nearest-neighbor hopping

Tuning Flat Bands by Interlayer Interaction, Spin-Orbital Coupling, and External Fields in Twisted Homotrilayer MoS_2

The role of Anderson's rule in determining electronic, optical and transport properties of transition metal dichalcogenide heterostructures.

Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study

Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

Tunability of Multiple Ultraflat Bands and Effect of Spin-Orbit Coupling in Twisted Bilayer Transition Metal Dichalcogenides

Band engineering in epitaxial monolayer transition metal dichalcogenides alloy Mo<i><sub>x</sub></i>W<sub>1-<i>x</i></sub>Se<sub>2</sub> thin films

A generic tight-binding model for monolayer, bilayer and bulk MoS2

Tuning electronic properties in transition metal dichalcogenides MX$_2$ (M= Mo/W, X= S/Se) heterobilayers with strain and twist angle

Geometric band properties in strained monolayer transition metal dichalcogenides using simple band structures

Tunable electronic properties of two-dimensional transition metal dichalcogenide alloys: A first-principles prediction

Electronic Structure, mass fluctuation, and Localized Bond Properties of two-dimensional double-layer transition metal chalcogenide MX$_2$ (M = Mo, W; X = S, Se, Te) Calculated Based on Density Functional Theory and BBC model

Comparative Analysis of Tight-Binding models for Transition Metal Dichalcogenides

Four-band tight-binding model of TiSiCO-family monolayers

Symmetric Wannier states and tight-binding model for quantum spin Hall bands in AB-stacked MoTe$_2$/WSe$_2$

On Valence-Band Splitting in Layered MoS2