Abstract:Integrated Circuit (IC) technologies have begun transitioning to wide band gap (WBG) substrates (i.e., Silicon carbide (SiC)) due to the intrinsic properties (i.e., high capacitance, thermal stability, and wear resistance) of these semiconducting materials. This has led to the development of Chemical Mechanical Planarization (CMP) processes that use aggressive chemical conditions and increasing mechanical forces to reach optimal material removal rates (MRR). The harsh CMP process parameters often result in contamination/defectivity (i.e., organic residue, abrasive particles, etc.) left on post-polish substrate surfaces and thus posing difficulty within the post-CMP cleaning process. Traditionally, post-CMP cleaning utilizes a polyvinyl alcohol (PVA) brush scrubbing method on the substrate surface. This has been shown to cause secondary defects (i.e., scratches, particle agglomerations, etc.) that inevitably lead to overall device failure. Alternative post-CMP methods utilize non-contact cleaning via megasonic energy to target removing defects (i.e., organic residue, pad debris, particle agglomerations, etc.) and avoid secondary defect generation. This research surveys post-CMP cleaning processes (contact and non-contact) on SiC substrates with various cleaning chemistries (i.e., supramolecular surfactants, catalytic complexes for generating reactive oxygen species (ROS), non-metal catalyst). Initial results show that supramolecular surfactants can produce high particle removal efficiency (PRE) due to their ability to be broken down into their monomeric units and encapsulate any removed residue under both brush and megasonic conditions Additionally, increased ROS generation disrupts the non-covalently adsorbed defects to the SiC surface and leads to an increased cleaning efficiency while decreasing the overall variability of particle removal results. Combining the ROS systems' disruptive power with surfactants' encapsulation mode, a highly efficient clean with low variability can be achieved under low-stress conditions.

Characterization of critically cleaned sapphire single-crystal substrates by atomic force microscopy, XPS and contact angle measurements

Recent Progress on Critical Cleaning of Sapphire Single-Crystal Substrates: A Mini-Review

AFM and XPS Studies on Material Removal Mechanism of Sapphire Wafer During Chemical Mechanical Polishing (CMP)

An in Situ Study of Chemical-Mechanical Polishing Behaviours on Sapphire (0001) Via Simulating the Chemical Product-Removal Process by AFM-tapping Mode in Both Liquid and Air Environments

Nanomaterials and Equipment for Chemical-Mechanical Polishing of Single-Crystal Sapphire Wafers

Gaas Surface Wet Cleaning by A Novel Treatment in Revolving Ultrasonic Atomization Solution

Study on the Surface Morphology of Micro-Particles and the Oxide Layer on Silicon Carbide Crystal Using Nanosecond Green Laser Cleaning Assisted with Airflow

Surface Acidity of Colloidal Silica and Its Correlation with Sapphire Surface Polishing

Atomic Force Microscope Tip Cleaning by Using Gratings As Micro‐washboards

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

A Study of Chemical Products Formed on Sapphire (0001) During Chemical–mechanical Polishing

Effects of plasma treatment on evolution of surface step-terrace structure of critically cleaned c-plane sapphire substrates: An AFM study

Atomic-scale Study on Particle Movement Mechanism During Silicon Substrate Cleaning Using ReaxFF MD

Towards Investigating Surface Quality of Single-Crystal Silicon Optics Polished with Different Processes

Fe-Nx/C Assisted Chemical–mechanical Polishing for Improving the Removal Rate of Sapphire

Atomic Step Formation on Sapphire Surface in Ultra-precision Manufacturing

Chemical mechanical polishing for sapphire wafers using a developed slurry

Application of surface analysis in study on removal mechanism and abrasive selection during fused silica chemical mechanical polishing

Development of core–shell SiO 2 @A-TiO 2 abrasives and novel photocatalytic chemical machinal polishing for atomic surface of fused silica

Survey of Activated Cleaning Chemistries for Low-Stress Post-Chemical Mechanical Planarization Cleaning of Silicon Carbide

Atomic Step Morphology Research of LED Sapphire Substrate Polishing Surface and Its Periodicity