Effects of Oxygen Content and Nitrogen Incorporation in GdO Charge Storage Layer on Characteristics of MONOS Memory

Yuqiang LI,Lu LIU,Jianyun ZHU,Jingping XU

DOI: https://doi.org/10.3969/j.issn.1000-3819.2013.01.004

2013-01-01

Abstract:The MONOS (Metal-Oxide-Nitride-Oxide-Si) capacitor memory with GdOx or GdON as charge storage layer (CSL) is fabricated by the reactive sputtering method, and the influences of different oxygen content and nitrogen incorporation in CSL on the MONOS memory characteristics are investigated. Experimental results show that GdO CSL prepared in oxygen-rich ambient has less oxygen vacancies (charge traps) and many Gd-Si bonds near the interface, leading to its poor inter face quality and memory characteristics. The incorporation of nitrogen in GdO CSL induces a large number of deep-level electron traps, increases its dielectric constant and decreases the interface traps, so that the sample with GdON as CSL exhibits excellent memory characteristics, i.e. a large memory window of 4.1 V (at ± 13 V, 1 s), high operating speed, good retention properties and the excellent endurance properties (after 105 P/E cycles, the memory window almost remains unchanged).