Abstract:Understanding the Zn diffusion behavior in GaSb is very important to accurately control the distribution of Zn during the fabrication of photoelectric devices. The surface concentration and effective surface diffusivity are two key parameters for modeling the Zn profile in GaSb. The experimental results indicated that when the diffusion temperature and time are kept unchanged, the diffusion profiles with pure Zn, Zn–Sb, and Zn–Ga sources differ in the surface concentration and effective surface diffusivity. To quantitatively explain the effects of source composition on the two parameters, the relationship between the two parameters and the vapor pressure surrounding the GaSb wafer in the diffusion process was deduced based on a surface-equilibrium assumption and the substitutional-interstitial mechanism. The Ga/Sb/Zn ternary phase diagram was calculated and discussed for determining the vapor pressures in different source cases. The ratio of surface concentrations and that of effective surface diffusivities between different sources were obtained to quantitatively explain the experiment results. The theoretical and experimental results both indicated that adding Sb to pure Zn source keeps the surface concentration unchanged while slightly decreases the effective surface diffusivity, and that adding Ga to pure Zn source significantly decreases both the surface concentration and effective surface diffusivity.

The Intrinsic Relationship Between the Kink-and-tail and Box-Shaped Zinc Diffusion Profiles in N-Gasb

Experimental and Theoretical Investigation of Zinc Diffusion in N-GaSb

Identification of the dissociative and kick-out diffusion mechanisms of Zn diffusion in GaAs by photoluminescence analysis

First-Principles Investigation on Diffusion Mechanism of Zinc in N-Gasb

Effects of the Composition of Diffusion Source on the Surface Concentration and Effective Surface Diffusivity of Zn in N-Gasb

Experimental investigation on the mechanism of zinc diffusion in tellurium doped gallium antimonide

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

A Novel Zinc Diffusion Process for the Fabrication of High-Performance Gasb Thermophotovoltaic Cells

Continuous wave CO2 laser induced diffusion of Zn into GaAs using a solid state diffusion source

Spontaneous Ga Incorporation in Zno Nanowires Epitaxially Grown on Gan Substrate

The investigation of Mg–Zn diffusion behaviour using Glow Discharge Optical Emission Spectroscopy (GD-OES) characterization method

Studies on Inas/Gasb Superlattice Structural Properties by High Resolution X-Ray Diffraction

Spontaneous Emission Mechanisms of GaInAsN∕GaAs Quantum Dot Systems

The Simulation and Optimization of the Internal Quantum Efficiency of GaSb Thermophotovoltaic Cells with a Box-Shaped Zn Diffusion Profile

Point-Defects Assisted Zn-Diffusion in AlGaInP/GaInP Systems During the MOVPE Growth of Inverted Multijunction Solar Cells

First-principles Study of the Diffusion of Ga Via Interstitial-Mediated Mechanisms in ZnO

X-Ray Diffraction Analysis on Gallium-Indium Interdiffusion in Quantum Dot Superlattices

Pulsed Nd:YAG laser induced diffusion of Zn into GaAs using solid state diffusion source

Role of Edge Dislocation and Si Impurity in Linking the Blue Luminescence and Yellow Luminescence in N-Type GaN Films

Carrier Dynamics Of Inxga1-Xn Quantum Disks Embedded In Gan Nanocolumns

X-ray Diffraction and Optical Characterization of Interdiffusion in Self-Assembled InAs/GaAs Quantum-Dot Superlattices