Abstract:Femtosecond laser ablation has become one of the important structural processing methods for the third-generation semiconductor material, silicon carbide (SiC), and it is gradually being employed in the manufacture of microelectromechanical systems and microelectronic devices. Experimental study has been performed on infrared single and multiple pulses (1035 nm) femtosecond laser ablation of SiC at various processing parameters. Diameters of laser ablation spots on 4H-SiC were measured to estimate the absorption threshold for material modification and structural transformation, which were 2.35 J/cm2 and 4.97 J/cm2, respectively. In the multiple-pulse scribing ablation for microgrooves, the ablation threshold dropped to 0.70 J/cm2 due to the accumulation effect when the effective pulse number reached 720. The calculated average of the thermally stimulated ablation depth of 4H-SiC is 22.4 nm, which gradually decreased with the raising of the effective pulse number. For obtaining square trenches with precise and controllable depths and a smooth bottom in 4H-SiC, the effects of processing parameters on the material removal rate and surface roughness are discussed. The ablation rate per pulse is almost constant, even if the effective pulse number varies. The reduction of laser spot overlapping ratio in x direction has a greater weakening effect on the material removal rate than that in y direction. The precise amount of material removal can still be controlled, while modulating the surface roughness of the ablated features by changing the hatch rotation angle. This research will help to achieve controllable, accurate, and high-quality machining results in SiC ablation, using infrared femtosecond laser.

Experiment of Si Target Ablation with Soft X-Ray Laser Operating at A Wavelength of 46.9 Nm

Si and Cu Ablation with a 469-Nm Laser Focused by a Toroidal Mirror

Si and Cu ablation with a 46.9-nm laser focused by a toroidal mirror

Study of experimental method for soft-X-ray-driven ablation

Radiative Ablation to Low-Z Matter

Experiments on X-ray-ablated C8H8samples

Experimental Study on 800 Nm Femtosecond Laser Ablation of Fused Silica in Air and Vacuum

Experimental study on femtosecond laser ablation of 4H-SiC substrate

The Experimental and Modeling Study of Femtosecond Laser-Ablated Silicon Surface

Nanosecond pulsed laser ablation of silicon—finite element simulation and experimental validation

Delayed Phase Explosion During High-Power Nanosecond Laser Ablation of Silicon

Modeling of excimer laser ablation of silicon carbide

Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser

Experimental Investigations of Hard X-Ray Source Produced by Picosecond Laser-Irradiated Solid Target

Hydrodynamic Simulation of Silicon Ablation by Ultrashort Laser Irradiation

Computational and Experimental Study of Nanosecond Laser Ablation of Crystalline Silicon

Ablation Threshold and Material Removal Mechanisms of SiC Processed by Femtosecond Laser

Effects of Parameters in Femtosecond Laser Micromachining on Ablation of Silicon

Craters and Nanostructures on BaF2 Sample Induced by a Focused 46.9nm Laser

Nanosecond laser ablation of Si(111) under an aqueous medium

Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change