A back-gate controlled silicon nanowire sensor with sensitivity improvement for DNA and pH detection

Pengfei Dai,Anran Gao,Na Lu,Tie Li,Yuelin Wang-
DOI: https://doi.org/10.7567/JJAP.52.121301
IF: 1.5
2013-01-01
Japanese Journal of Applied Physics
Abstract:Silicon nanowire field-effect transistors (SiNW-FETs) are emerging as powerful chemical and biological sensors with various attractive features including-high sensitivity and direct electrical readout. However, limited systematic studies have appeared on how the working voltage affects their sensitivity. Here we demonstrate that the current change rate of SiNW-FETs can be exponentially enhanced in the subthreshold regime by both analyses of FET's theory model and electrical characteristics. On that basis, the back-gate controlled sensors' detection sensitivity for DNA and pH value appears great improvement when working in the subthreshold regime, which shows that optimization of SiNW-FET operating conditions, can provide significant improvement for the limits of SiNW-FET nanosensors, making it possible for higher-accuracy chemical and biological molecules detection. (C) 2013 The Japan Society of Applied Physics
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