Abstract:Silicon nanowire field effect (SiNW-FET) biosensors have been successfully used in the detection of nucleic acids, proteins and other molecules owing to their advantages of ultra-high sensitivity, high specificity, and label-free and immediate response. However, the presence of the Debye shielding effect in semiconductor devices severely reduces their detection sensitivity. In this paper, a three-dimensional stacked silicon nanosheet FET (3D-SiNS-FET) biosensor was studied for the high-sensitivity detection of nucleic acids. Based on the mainstream Gate-All-Around (GAA) fenestration process, a three-dimensional stacked structure with an 8 nm cavity spacing was designed and prepared, allowing modification of probe molecules within the stacked cavities. Furthermore, the advantage of the three-dimensional space can realize the upper and lower complementary detection, which can overcome the Debye shielding effect and realize high-sensitivity Point of Care Testing (POCT) at high ionic strength. The experimental results show that the minimum detection limit for 12-base DNA (4 nM) at 1 × PBS is less than 10 zM, and at a high concentration of 1 μM DNA, the sensitivity of the 3D-SiNS-FET is approximately 10 times higher than that of the planar devices. This indicates that our device provides distinct advantages for detection, showing promise for future biosensor applications in clinical settings.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is: **How to overcome the Debye screening effect in field - effect transistor (FET) biosensors to achieve high - sensitivity DNA detection**. ### Problem Background Traditional silicon nanowire field - effect transistor (SiNW - FET) biosensors have been widely used in the detection of molecules such as nucleic acids and proteins due to their ultra - high sensitivity, high specificity, and the advantages of being label - free and having an immediate response. However, when these sensors detect biomolecules in a liquid environment, they will be affected by the Debye screening effect, resulting in a significant decrease in detection sensitivity. The Debye screening effect means that when the distance between the target molecule and the sensing surface exceeds the Debye length, the charge effect of the target molecule will be shielded by the electrical double layer (EDL), so it cannot effectively affect the carrier distribution in the channel, and thus affects the current change. ### Solution To solve this problem, the author designed and fabricated a three - dimensional stacked silicon nanoplate field - effect transistor (3D - SiNS - FET) biosensor. This sensor overcomes the Debye screening effect in the following ways: 1. **Three - dimensional stacking structure design**: Based on the mainstream gate - all - around (GAA) process, a three - dimensional stacking structure with an 8 nm cavity spacing was designed and fabricated, allowing probe molecules to be modified in the stacking cavity. 2. **Upper and lower complementary detection**: Taking advantage of the three - dimensional space, complementary detection on the upper and lower surfaces was achieved, ensuring that the target biomolecule is captured within the Debye length range, thereby overcoming the Debye screening effect. 3. **High - sensitivity detection**: The experimental results show that the lowest detection limit of this sensor for 12 - base DNA (4 nM) in 1× PBS buffer is less than 10 zM. At a DNA concentration of 1 µM, the sensitivity of 3D - SiNS - FET is about 10 times higher than that of planar devices. ### Conclusion Through the above design, the 3D - SiNS - FET biosensor not only successfully overcomes the Debye screening effect but also achieves ultra - high - sensitivity DNA detection, showing great potential in future clinical applications. ### Key Formula The calculation formula for Debye length \(\lambda_D\) is: \[ \lambda_D=\sqrt{\frac{\varepsilon k_B T}{2 N_A e^2 I}} \] where: - \(\varepsilon\) is the dielectric constant, - \(k_B\) is the Boltzmann constant, - \(T\) is the absolute temperature, - \(N_A\) is the Avogadro constant, - \(e\) is the electron charge, - \(I\) is the ionic strength. By adjusting these parameters, the Debye length can be effectively increased, thereby reducing the influence of the Debye screening effect.

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