Abstract:Two-dimensional van der Waals (2D vdW) ferromagnets possess outstanding scalability, controllable ferromagnetism, and out-of-plane anisotropy, enabling the compact spintronics-based non-volatile in-memory computing (nv-IMC) that promises to tackle the memory wall bottleneck issue. Here, by employing the intriguing room-temperature ferromagnetic characteristics of emerging 2D Fe3GeTe2 with the dissimilar electronic structure of the two spin-conducting channels, we report on a new type of non-volatile spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device based on Fe3GeTe2/MgO/Fe3GeTe2 heterostructure, which demonstrates the uni-polar and high-speed field-free magnetization switching by adjusting the ratio of field-like torque to damping-like torque coefficient in the free layer. Compared to the conventional 2T1M structure, the developed 3-transistor-2-MTJ (3T2M) cell is implemented with the complementary data storage feature and the enhanced sensing margin of 201.4% (from 271.7 mV to 547.2 mV) and 276% (from 188.2 mV to 520 mV) for reading "1" and "0", respectively. Moreover, superior to the traditional CoFeB-based MTJ memory cell counterpart, the 3T2M crossbar array architecture can be executed for AND/NAND, OR/NOR Boolean logic operation with a fast latency of 24 ps and ultra-low power consumption of 2.47 fJ/bit. Such device to architecture design with elaborated micro-magnetic and circuit-level simulation results shows great potential for realizing high-performance 2D material-based compact SOT magnetic random-access memory, facilitating new applications of highly reliable and energy-efficient nv-IMC.

High Reliability Sensing Circuit for Deep Submicron Spin Transfer Torque Magnetic Random Access Memory

Data-cell-variation-tolerant triple sampling non-destructive self-reference sensing scheme of STT-MRAM

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Dynamic Time-Domain Sensing Scheme for Spin-Orbit Torque MRAM

Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Optimization Scheme to Minimize Reference Resistance Distribution of Spin-Transfer-Torque MRAM

The single event upset hardened design of spin transfer torque magnetic random access memory read circuits at 40 nm technology

Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET

The Write Deduplication Mechanism Based On A Novel Low-Power Data Latched Sense Amplifier For A Magnetic Tunnel Junction Based Non-Volatile Memory

A 1-Mb 28-Nm 1T1MTJ STT-MRAM with Single-Cap Offset-Cancelled Sense Amplifier and in Situ Self-Write-Termination

A Reference-less Slope Detection Technique in 65nm for Robust Sensing of 1T1R Arrays

Reliability Emphasized MTJ/CMOS Hybrid Circuit Towards Ultra-Low Power

Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

Uncovering Atomic Migrations Behind Magnetic Tunnel Junction Breakdown

Complementary-Magnetization-Switching Perpendicular Spin-Orbit Torque Random-Access Memory Cell for High Read Performance

Experimental Demonstration of NAND-Like Spin-Torque Memory Unit

Predictive Materials Design of Magnetic Random-Access Memory Based on Nanoscale Atomic Structure and Element Distribution

Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing

Probing Write Error Rate and Random Telegraph Noise of MgO Based Magnetic Tunnel Juction Using a High Throughput Characterization System

A quantum sensing metrology for magnetic memories

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing