[Fe80ni20–o/sio2]n Multilayer Thin Films for Applications in GHz Range

H. Geng,J. Q. Wei,S. J. Nie,Y. Wang,Z. W. Wang,L. S. Wang,Y. Chen,D. L. Peng,F. S. Li,D. S. Xue
DOI: https://doi.org/10.1016/j.matlet.2012.11.015
IF: 3
2013-01-01
Materials Letters
Abstract:Thin film materials with excellent high-frequency, magnetic and electrical properties are in great demand in modern electromagnetic devices operating in GHz range. In this letter, we fabricated [Fe80Ni20–O/SiO2]n multilayer thin films with different SiO2 interlayer thicknesses (t=0.5–4nm) and fixed Fe80Ni20–O layer thickness by controlling the sputtering time at room temperature. In these films, the in-plane uniaxial magnetic anisotropy fields can be adjusted in a broad range (from 26 to 107Oe) by just changing the thickness of each SiO2 interlayer without applying any inducing field. Excellent high-frequency performances in GHz range have been observed in the typical sample.
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