Improved Performances of Organic Light-Emitting Diodes with Mixed Layer and Metal Oxide As Anode Buffer

Qin Xue,Shouyin Liu,Shiming Zhang,Ping Chen,Yi Zhao,Shiyong Liu
DOI: https://doi.org/10.1016/j.sse.2012.05.066
IF: 1.916
2013-01-01
Solid-State Electronics
Abstract:We fabricated organic light-emitting devices (OLEDs) employing 2-methyl-9,10-di(2-naphthyl)-anthracene (MADN) as hole-transport material (HIM) instead of commonly used N,N'-bis-(1-naphthyl)-N,N'-diphenyl,1,1'-biphenyl-4,4'-diamine (NPB). After inserting a 0.9 nm thick molybdenum oxide (MoOx) layer at the indium tin oxide (ITO)/MADN interface and a 5 nm thick mixed layer at the organic/organic heterojunction interface, the power conversion efficiency of the device can be increased by 4-fold. (C) 2012 Elsevier Ltd. All rights reserved.
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