Overall design of 35 kV±200 Mvar STATCOM system

Weixiong Huang,Jinning Liu,Yongyuan Wang,Qirong Jiang,Zhichang Yuan,Wei Du
DOI: https://doi.org/10.3969/j.issn.1006-6047.2013.10.024
2013-01-01
Abstract:The overall design of a 35 kV±200 Mvar STATCOM system based on IEGT (Injection Enhanced Gate Transistor) is proposed for Dongguan Substation to meet its requirements for reactive power compensation and voltage stability enhancement. A parallel delta topology is adopted to avoid the parallel or serial connection of switching devices. Instead of the conventional phase locked loop with two integration blocks, that with only one integration block is proposed for the fast detection of phase angle jump of bus voltage. A multi-objective coordinated control scheme is designed, which, according to grid state information, detects the objective to meet the requirements of grid for the multiple objectives of STATCOM operation. The control strategy and its effectiveness are simulated based on the network parameters of Dongguan grid, which proves that, the STATCOM system responses quickly to the short circuit fault by outputting reactive power to effectively raise the voltage of 220 kV bus, meeting the requirements of grid operation under both steady-state and transient conditions.
What problem does this paper attempt to address?