Abstract:As integrated circuits’ minimum feature size, known as the critical dimension (CD), decreases, lithographic resolution must increase. Lithographic resolution depends primarily on the wavelength of light used to process the chips—theoretically, the CD can be as small as half a wavelength—but resolution enhancement techniques (RETs) have been developed to get the finest resolution possible from a system in practice. Traditional RETs used in lithography include optical proximity correction (OPC) and source mask optimization (SMO).1, 2 However, most of these RETs are based on scalar imaging models and optimize certain parameters under fixed process conditions and fixed numerical aperture (NA). We suggest that a so-called vector model be adopted in immersion lithography because such a system uses polarized light to illuminate the mask. Polarized light enhances the image contrast and the resolution. Using our rigorous vector imaging model, we developed RETs that can use up to 70 parameters for a mask, process, and lithography tool co-optimization (MPLCO) technique.3–8 We investigated a set of gradient-based, pixelated vector OPC and SMO algorithms and optimization strategies with fixed NA and process parameters. A pixelated vector OPC successfully enhanced image fidelity, and compensated for the effects of wavefront aberration and polarization aberration (see Figure 1). We developed three kinds of gradient-based SMO algorithms and different optimization strategies under the vector imaging model, referred to as the simultaneous SMO, sequential SMO, and hybrid SMO methods. The hybrid SMO method outperformed others by achieving better image fidelity, process window, and convergence properties, using just two additional dimensions of source shape and intensity (see Figures 2 and 3). Figure 1. Performance comparison between optical proximity correction (OPC) optimization algorithms based on scalar and vector imaging models, binary mask, and target image with a critical dimension (CD) of 45nm.3

Pixelated Source and Mask Optimization for Immersion Lithography

Hybrid Source Mask Optimization for Robust Immersion Lithography.

Gradient-Based Source And Mask Optimization In Optical Lithography

Source and Mask Co-Optimization Using A Gradient Based Method in Optical Lithography

Robust Hybrid Source and Mask Optimization to Lithography Source Blur and Flare

Parametric Source-Mask-Numerical Aperture Co-Optimization for Immersion Lithography

Mask Optimization Approaches in Optical Lithography Based on a Vector Imaging Model

Fast Pixelated Lithographic Source and Mask Joint Optimization Based on Compressive Sensing.

Gradient-Based Source Mask Optimization for Extreme Ultraviolet Lithography

High Performance Source Optimization Using A Gradient-Based Method in Optical Lithography

Gradient-based Joint Source Polarization Mask Optimization for Optical Lithography

Fast Source Mask Co-Optimization Method for High-Na EUV Lithography

Gradient-Based Resolution Enhancement Optimization Methods Based on Vector Imaging Model

Multi-objective Lithographic Source Mask Optimization to Reduce the Uneven Impact of Polarization Aberration at Full Exposure Field

Efficient Informatics-Based Source and Mask Optimization for Optical Lithography

Pixel-based Simultaneous Source and Mask Optimization for Resolution Enhancement in Optical Lithography

Vectorial Resolution Enhancement: Better Fidelity for Immersion Lithography

Compressive Sensing Approaches for Lithographic Source and Mask Joint Optimization Generalized Euler'Constant Family

Informational Lithography Approach Based on Source and Mask Optimization.

Source Mask Optimization For Extreme-Ultraviolet Lithography Based On Thick Mask Model And Social Learning Particle Swarm Optimization Algorithm

Sampling-based Imaging Model for Fast Source and Mask Optimization in Immersion Lithography.