Vectorial Resolution Enhancement: Better Fidelity for Immersion Lithography
Yanqiu Li,Xu Ma,Xuejia Guo,Lisong Dong
DOI: https://doi.org/10.1117/2.1201409.005461
2014-01-01
SPIE Newsroom
Abstract:As integrated circuits’ minimum feature size, known as the critical dimension (CD), decreases, lithographic resolution must increase. Lithographic resolution depends primarily on the wavelength of light used to process the chips—theoretically, the CD can be as small as half a wavelength—but resolution enhancement techniques (RETs) have been developed to get the finest resolution possible from a system in practice. Traditional RETs used in lithography include optical proximity correction (OPC) and source mask optimization (SMO).1, 2 However, most of these RETs are based on scalar imaging models and optimize certain parameters under fixed process conditions and fixed numerical aperture (NA). We suggest that a so-called vector model be adopted in immersion lithography because such a system uses polarized light to illuminate the mask. Polarized light enhances the image contrast and the resolution. Using our rigorous vector imaging model, we developed RETs that can use up to 70 parameters for a mask, process, and lithography tool co-optimization (MPLCO) technique.3–8 We investigated a set of gradient-based, pixelated vector OPC and SMO algorithms and optimization strategies with fixed NA and process parameters. A pixelated vector OPC successfully enhanced image fidelity, and compensated for the effects of wavefront aberration and polarization aberration (see Figure 1). We developed three kinds of gradient-based SMO algorithms and different optimization strategies under the vector imaging model, referred to as the simultaneous SMO, sequential SMO, and hybrid SMO methods. The hybrid SMO method outperformed others by achieving better image fidelity, process window, and convergence properties, using just two additional dimensions of source shape and intensity (see Figures 2 and 3). Figure 1. Performance comparison between optical proximity correction (OPC) optimization algorithms based on scalar and vector imaging models, binary mask, and target image with a critical dimension (CD) of 45nm.3