Abstract:Solution-processed polymeric semiconductor films are attracting wide interest for applications in flexible electronics, wherein environmental stability is still a big obstacle. In many polymeric thin-film electronic devices, vertical phase separation has been observed, which leads to film depth dependences of electronic properties. Here, a soft plasma-assisted surface etching method to improve the environmental stability and maintain the electronic properties of organic field-effect transistors (OFETs) is proposed, by which the unwanted thin-film surface (exposed to air) is selectively taken away upon soft plasma etching, and the layer beneath the surface (subsurface) is preserved without any damage to the subsurface's structure or electronic function. Investigation of frequently used polymeric semiconductors poly(3-hexylthiophene) and poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4b′]dithiophen-2-yl)-alt [1,2,5]thiadiazolo[3,4-c]pyridine] shows that the crystallinity of the surface layer is higher than that of the subsurface layer. However, for p-type polymeric semiconductors, higher crystallinity usually leads to a lower ionization energy and higher doping concentration during exposure to air and thus a higher background conductivity, deteriorating the switching-off capability of the organic field-effect transistors (OFETs). Therefore, by removing this surface layer, the lifetime of OFETs in air is effectively increased by over 50%.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.chemmater.1c00628?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.chemmater.1c00628</a>.Transfer curves ((−ID)1/2–VG) for unetched and etched P3HT transistors; output curves of unetched and etched P3HT transistors; on/off ratio and field-effect mobility of unetched and etched P3HT transistors; transfer curves of PCDTPT transistors measured in different conditions; transfer curves ((−ID)1/2–VG) for unetched and etched PCDTPT transistors; VON, field-effect mobility and SS–1 of unetched and etched PCDTPT transistors; output curves of unetched and etched PCDTPT transistors; schematic diagram and transfer curve PCDTPT transistor (etched before the deposition of electrodes); dual sweep transfer and output curves of P3HT and PCDTPT transistors; the effect of thickness on PCDTPT transistors performance; the effect of encapsulation on PCDTPT transistors performance; and the effect of crystallinity on DPP-DTT transistors performance (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.1c00628/suppl_file/cm1c00628_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

High Performance Langmuir–Schaeffer Film Transistors Based on Air Stable N-Type Diperylene Bisimide

High Mobility, Air Stable, Organic Single Crystal Transistors of an N-Type Diperylene Bisimide

Influence Of The Dielectric And Of The Active Layer Doping On The Fet Mobility In Ppv-Based Devices

Air Stable N-Channel Organic Semiconductors for Thin Film Transistors Based on Fluorinated Derivatives of Perylene Diimides

N-Alkyl substituted di(perylene bisimides) as air-stable electron transport materials for solution-processible thin-film transistors with enhanced performance

Laterally Expanded Rylene Diimides with Uniform Branched Side Chains for Solution-Processed Air Stable N-Channel Thin Film Transistors

High-Performance Solution-Deposited Ambipolar Organic Transistors Based on Terrylene Diimides

Polyethylene interfacial dielectric layer for organic semiconductor single crystal based field-effect transistors

Low Temperature, Solution-Processed Ambipolar Field-Effect Transistors Based on Polymer/self-Assembled Monolayer Modified InOx Hybrid Structures for Balanced Hole and Electron Mobilities Exceeding 1 Cm2 V−1 S−1

High performance n-channel thin-film field-effect transistors based on angular-shaped naphthalene tetracarboxylic diimides

Effects of Dielectric Material, HMDS Layer, and Channel Length on the Performance of the Perylenediimide-Based Organic Field-Effect Transistors

Fused Bithiophene Imide Oligomer and Diketopyrrolopyrrole Copolymers for N-Type Thin-Film Transistors.

Enhancing the Electrical and Thermal Stability of Organic Thin-Film Transistors by Utilizing Fluorinated Polyimide and Silicon Dioxide Bilayer Gate Dielectric

Forming Semiconductor/dielectric Double Layers by One-Step Spin-Coating for Enhancing the Performance of Organic Field-Effect Transistors

Liquid Crystal-Like Active Layer for High-Performance Organic Field-Effect Transistors

Effects of P-(Trifluoromethoxy)benzyl and P-(Trifluoromethoxy)phenyl Molecular Architecture on the Performance of Naphthalene Tetracarboxylic Diimide-Based Air-Stable N-Type Semiconductors.

Preparation and Properties of Multilayer Poly(3,4-Ethylenedioxythiophene) Langmuir–Blodgett Film

Air‐stable Perylene Diimide Trimer Material for n‐type Organic Electrochemical Transistors

Photoinduced electron transfer for improved FET performance based on the hybrid film of an amphiphilic perylene diimide and CdS

Diketopyrrolopyrrole-based small molecules for solution-processed n-channel organic thin film transistors

Surface Etching of Polymeric Semiconductor Films Improves Environmental Stability of Transistors