KOH-activated nitrogen-doped graphene by means of thermal annealing for supercapacitor

Bo Zheng,Ti-Wei Chen,Fang-Nan Xiao,Wen-Jing Bao,Xing-Hua Xia
DOI: https://doi.org/10.1007/s10008-013-2101-8
IF: 2.747
2013-01-01
Journal of Solid State Electrochemistry
Abstract:KOH-activated nitrogen-doped graphene nanosheets (aNG) have been synthesized using thermal annealing method and applied in supercapacitor. The samples are characterized by transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, and electrochemical techniques. Electrochemical results show that a capacitance of 132.4 F g −1 at a charge/discharge current density of 0.1 A g −1 is obtained for KOH-activated nitrogen-doped graphene which is nearly five times larger than that without KOH treatment. The present work demonstrates that KOH activation of thermally annealed nitrogen-doped graphene is a promising method for enhancing its application in energy storage system.
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