Abstract:The Si–C–H thin films were deposited at 300°C by plasma enhanced chemical vapor deposition (PECVD) and around 600°C by pyrolysis CVD, in which C2H4 and SiH4 were used as the resource gases and hydrogen as the carrying vehicle. The formation of micro-crystals in the Si–C–H films was investigated by TEM, IR spectroscopy and electrical resistivity measurements. The results show that many silicon nano-crystalline particles are embedded and distributed uniformly in the amorphous matrix of the Si–C–H thin film. A higher content of C2H4 results in a lower crystallinity of the film deposited both by PECVD and pyrolysis CVD. The crystal grows more easily in the film deposited with C2H4–SiH4 at high temperature around 600°C by pyrolysis CVD than that deposited at 300°C by PECVD. The resistivity of the film by pyrolysis CVD at high deposition temperature is about five orders of magnitude lower than that by PECVD at low deposition temperature. The SiC crystalline phase trends to form quite possibly in the Si–C–H thin film deposited at 630°C by pyrolysis CVD. The expressions of the crystallinity and resistivity as functions of the content of C2H4 are theoretically deduced. The theoretical curves are showed to be very coincident with the experimental results in the Si–C–H thin film. The crystallinity of the film rests mainly with the nucleation rate of silicon phase that is dependent on the content of C2H4 in deposition source gases. The resistivity behavior of Si–C–H thin film matches with the parallel model of the two phase events, where the contribution of crystalline phase is appropriate to the contact probability among the silicon crystals and compatible with homogeneous distribution of the particles embedded in matrix.

Influence of Substrate Temperature on the Morphology, Composition and Growth Rate of SiC Films Deposited by PECVD

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

A Combinatorial Analysis of Deposition Parameters and Substrates on Performance of Μc-Si:H Thin Films by VHF-PECVD

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

beta-SiC thin films grown by PECVD at low temperature

Effect of Temperature on Microstructure and Composition of CVD SiC Coating

Influences of Substrate Temperature on Crystalline Characteristics and Mechanical Properties of SiNx Films Deposited by Microwave Electron Cyclotron Resonance Magnetron Sputtering

Ge Deposited at Different Substrate Temperatures and Its Impact on SiC Films Growth

Effect Of Substrate Temperature On The Surface Morphology And Interface Structure Of Ptsi/P-Si

Influence of Substrate Temperature on the Growth of Μc-Sige Thin Film

Effects of Substrate Temperature on Heteroepitaxial Growth of 3C-Sic Thin Films by Mbe on Si(111) Substrate

Effects of Carbonization and Substrate Temperature on the Growth of 3c–sic on Si(111) by SSMBE

Temperature influence on the deposition of nitrogen-doped SiC polycrystalline films

Effect of Substrate Temperature on the Growth of 6H-SiC Thin Films on Al_2O_3(0001) Surface

The Effects of Deposition Temperature on the Depositon Rates and Structures of CVD SiC Coatings

Effect of Temperature on the Chemical Vapor Deposition of Silicon Carbide Coatings

Influence of Deposition Temperature on the Structure of Si3n4 Thin Film Prepared by Mwecr-Pecvd

Effect of Substrate Temperature on the Optical Properties of A-Si:H Films by RF-PECVD

Effects of Carbon Additions on Crystallinity and Resistivity in Si–C–H Thin Films Deposited by CVDs

Homoepitaxial Growth of SiC Thin Film on 4H-SiC Substrate