Abstract:Two-color emitting colloidal semiconductor nanocrystals (NCs) are of interest for applications in multimodal imaging, sensing, lighting, and integrated photonics. Dual color emission from core- and shell-related optical transitions has been recently obtained using so-called dot-in-bulk (DiB) CdSe/CdS NCs comprising a quantum-confined CdSe core embedded into an ultrathick (∼7-9 nm) CdS shell. The physical mechanism underlying this behavior is still under debate. While a large shell volume appears to be a necessary condition for dual emission, comparison between various types of thick-shell CdSe/CdS NCs indicates a critical role of the interface "sharpness" and the presence of potential barriers. To elucidate the effect of the interface morphology on the dual emission, we perform side-by-side studies of CdSe/CdS DiB-NCs with nominally identical core and shell dimensions but different structural properties of the core/shell interface arising from the crystal structure of the starting CdSe cores (zincblende vs wurtzite). While both structures exhibit dual emission under comparable pump intensities, NCs with a zincblende core show a faster growth of shell luminescence with excitation fluence and a more readily realized regime of amplified spontaneous emission (ASE) even under "slow" nanosecond excitation. These distinctions can be linked to the structure of the core/shell interface: NCs grown from the zincblende cores contain a ∼3.5 nm thick zincblende CdS interlayer, which separates the core from the wurtzite CdS shell and creates a potential barrier for photoexcited shell holes inhibiting their relaxation into the core. This helps maintain a higher population of shell states and simplifies the realization of dual emission and ASE involving shell-based optical transitions.

The Interface Effect on the Band Offset of Semiconductor Nanocrystals with Type-I Core-Shell Structure.

Band Alignment Determination of Zno/Pbse Heterostructure Interfaces by Synchrotron Radiation Photoelectron Spectroscopy

Influence of the Core/Shell Interface on Biexciton Auger Recombination in Individual Nanocrystal Quantum Dots

Effect of Core/Shell Interface on Carrier Dynamics and Optical Gain Properties of Dual-Color Emitting CdSe/CdS Nanocrystals

The Strain Effects and Interfacial Defects of Large ZnSe/ZnS Core/Shell Nanocrystals

Modulation of the carrier mobility enhancement in Si/Ge core-shell nanowires under different interface confinements.

Band Alignment of ZnO/CdSe Quantum Dots Heterojunction Determined by Ultraviolet Photoelectron Spectroscopy Using Synchrotron Radiation

Optical and X-ray Photo-emission Spectroscopies of Core/Shell Colloidal CdSe/CdS Quantum Dots: Modeling and Experimental Determination of Band Alignment

Size Dependence and Spatial Variation of Electronic Structure in Nonpolar ZnO Nanobelts

Atomic Identification of Interfaces in Individual Core@shell Quantum Dots

Heterointerface-Driven Band Alignment Engineering and Its Impact on Macro-Performance in Semiconductor Multilayer Nanostructures

Impact of Inhomogeneous Strain on the Valence Band Structures of Ge-Si Core-Shell Nanowires

Suppression of the Auger Recombination Process in CdSe/CdS Core/Shell Nanocrystals

Band Gap Modulation and Indirect to Direct Band Gap Transition in Zns/Si and Si/Zns Core/Shell Nanowires

Valence band offset and interface formation of Ge/ZnSe(100) studied by synchrotron radiation photoemission

Understanding the role of interface in advanced semiconductor nanostructure and its interplay with wave function overlap

Correlation Between the Band Gap, Elastic Modulus, Raman Shift and Melting Point of CdS, ZnS, and CdSe Semiconductors and Their Size Dependency

Effect of One-Coordinated Atoms on the Electronic and Optical Properties of ZnSe Clusters

Structural and Electronic Properties of CdSe/ZnS and ZnS/CdSe Core/shell Nanowires Via First Principles Study

First-principles Insights on the Electronic and Optical Properties of ZnO@CNT Core@shell Nanostructure

Interplay of quantum confinement and strain effects in type I to type II transition in Ge/Si core-shell nanocrystals