Doping Effect on High-Pressure Behaviors of Sc,Y-Doped Aln Nanoprisms

Ridong Cong,Hongyang Zhu,Xiaoxin Wu,Chunli Ma,Guangchao Yin,Xiaojun Xie,Qiliang Cui
DOI: https://doi.org/10.1021/jp312352j
2013-01-01
Abstract:In situ X-ray diffraction studies of rare-earth metals Sc- and Y-doped AlN nanoprisms were carried out using angle-dispersive synchrotron radiation technique in a diamond anvil cell up to approximately 40 and 35 GPa, respectively. Pressure-induced wurtzite-to-rocksalt phase transitions start at 18.6 and 16.2 GPa and complete at 29.8 and 26.5 GPa, showing lower phase-transition pressures compared with bulk AlN and AlN nanowires while slightly higher than that of AlN nanocrystals. The effects of volume expansion, volume collapse, and crystal defects on phase transition have been discussed. The distinct high-pressure behaviors can be explained in terms of the doping-induced Al vacancy defects along with substitute ions sit at the cation sites, which lead to the distortion of the crystal structure that reduce the structural stability of the doped AlN nanoprisms.
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