Abstract:Superconductivity (SC) is a ubiquitous feature of graphite allotropes, having been observed in Bernal bilayers[1], rhombohedral trilayers[2], and a wide variety of angle-misaligned multilayers[3-6]. Despite significant differences in the electronic structure across these systems, supporting the graphite layer on a WSe$_2$ substrate has been consistently observed to expand the range of SC in carrier density and temperature[7-10]. Here, we report the observation of two distinct superconducting states (denoted SC$_1$ and SC$_2$) in Bernal bilayer graphene with strong proximity-induced Ising spin-orbit coupling. Quantum oscillations show that while the normal state of SC$_1$ is consistent with the single-particle band structure, SC$_2$ emerges from a nematic normal state with broken rotational symmetry. Both superconductors are robust to in-plane magnetic fields, violating the paramagnetic limit; however, neither reach fields expected for spin-valley locked Ising superconductors. We use our knowledge of the Fermi surface geometry of SC$_1$ to argue that superconductivity is limited by orbital depairing arising from the imperfect layer polarization of the electron wavefunctions. Finally, a comparative analysis of transport and thermodynamic compressibility measurements in SC$_2$ shows that the proximity to the observed isospin phase boundaries, observed in other rhombohedral graphene allotropes, is likely coincidental, constraining theories of unconventional superconducting pairing mechanisms in theses systems.

Depressed Scattering Across Grain Boundaries In Single Crystal Graphene

Electronic Transport in Chemical Vapor Deposited Graphene Synthesized on Cu: Quantum Hall Effect and Weak Localization

Low-temperature quantum transport in CVD-grown single crystal graphene

Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition

Anomalous Dissipation Mechanism and Hall Quantization Limit in Polycrystalline Graphene Grown by Chemical Vapor Deposition

Electronic states of disordered grain boundaries in graphene prepared by chemical vapor deposition

Quantum transport in CVD graphene synthesized with liquid carbon precursor

Mapping electronic states of dual-parallel and symmetric zigzag grain boundaries of graphene on highly oriented pyrolytic graphite

Modeling Electronic Structure and Transport Properties of Graphene with Resonant Scattering Centers

Electronic Structure Study of Ordering and Interfacial Interaction in Graphene/cu Composites

Size Dependence of Electronic Property in CVD-grown Single-Crystal Graphene

Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect of Single Crystalline Graphene Grown on Ge(110)

Ultrafast Electron-Optical Phonon Scattering and Quasiparticle Lifetime in Cvd-Grown Graphene

Magnetotransport of Polycrystalline Graphene: Shubnikov-de Haas Oscillation and Weak Localization Study

Electrical Control of Intervalley Scattering in Graphene Via the Charge State of Defects

Grains and grain boundaries in single-layer graphene atomic patchwork quilts

Electronic Transport Properties of Co Cluster-Decorated Graphene

Nonlinear Transport of Graphene in the Quantum Hall Regime

Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

Effect of grain boundaries on charge transport in CVD-grown bilayer graphene

Nematicity and Orbital Depairing in Superconducting Bernal Bilayer Graphene with Strong Spin Orbit Coupling