Abstract:It is essential to understand to what extent the protected edge states of topological insulators (TIs) can survive against the degradation of the ubiquitous disorders in realistic devices. From a different perspective, disorders can also help to enrich the applications by modulation of the phases in TIs. In this work, the phases and phase transitions in stanene, a two-dimensional TI, have been investigated via the statistical approach based on the random matrix theory. Using a tight binding model with Aderson disorder term and the Landauer-Büttiker formalism, we calculated the conductance of realistic stanene ribbons of tens of nanometers long with random disorders. The calculated phase diagram presents TI in the gap, metal in high energy and ordinary insulator (OI) in large disorder region. Increasing the width of the ribbon can significantly enhance the robustness of TI phase against disorders. Due to different underlying symmetries, the metallic phase can be further categorized into unitary and orthogonal classes according to the calculated universal conductance fluctuations. The local density of states (LDOS) is calculated, showing characteristic patterns, which can facilitate the experimental identification of the phases. It is found that different phases have distinguishing statistical distribution of conductance. Whereas at the phase boundary the distribution exhibits intermediate features to show where the phase transition occurs. To reveal the phase evolution process, we further studied the effects of the disorders on respective transmission channels. It is found that when phase transition takes place, the major transmission channels of the old phase are fading and the new channels of the new phase are emerging.

Stabilizing Topological Phases in Graphene Via Random Adsorption.

Topological Phase Transition in a Graphene System with a Coexistence of Coulomb Interaction, Staggered Potential, and Intrinsic Spin-Orbit Coupling

Topological Phases in Gated Bilayer Graphene: Effects of Rashba Spin-Orbit Coupling and Exchange Field

Topological phases and twisting of graphene on a dichalcogenide monolayer

Tunable topological phases in nanographene-based spin-1/2 alternating-exchange Heisenberg chains

Manipulating topology in tailored artificial graphene nanoribbons

Synergistic correlated states and nontrivial topology in coupled graphene-insulator heterostructures

Topological phases of graphene-Kagome systems

Topological phase transitions induced by the variation of exchange couplings in graphene

Thickness-dependent Topological Phases and Flat Bands in Rhombohedral Multilayer Graphene

Phase transitions, conductance fluctuations and distributions in disordered topological insulator stanene

Topological Phase Transition Induced by Spin–orbit Coupling in Bilayer Graphene

Strain manipulation of Majorana fermions in graphene

Magnetically tuned topological phase in graphene nanoribbon heterojunctions

Quantum Hall phase in graphene engineered by interfacial charge coupling

Gate-tunable topological phases in superlattice modulated bilayer graphene

Two-dimensional Topological Insulator State and Topological Phase Transition in Bilayer Graphene.

Topological Phases and Phase Transitions on the Honeycomb Lattice

Local engineering of topological phase in monolayer MoS2

Designer topological flat bands in one-dimensional armchair graphene antidot lattices

Local Engineering of Topological Phase in Monolayer MoS 2