Topological Phases in Gated Bilayer Graphene: Effects of Rashba Spin-Orbit Coupling and Exchange Field

Zhenhua Qiao,Xiao Li,Wang-Kong Tse,Hua Jiang,Yugui Yao,Qian Niu
DOI: https://doi.org/10.1103/physrevb.87.125405
IF: 3.7
2013-01-01
Physical Review B
Abstract:We present a systematic study on the influence of Rashba spin-orbit coupling, interlayer potential difference and exchange field on the topological properties of bilayer graphene. In the presence of only Rashba spin-orbit coupling and interlayer potential difference, the band gap opening due to broken out-of-plane inversion symmetry offers new possibilities of realizing tunable topological phase transitions by varying an external gate voltage. We find a two-dimensional $Z_2$ topological insulator phase and a quantum valley Hall phase in $AB$-stacked bilayer graphene and obtain their effective low-energy Hamiltonians near the Dirac points. For $AA$ stacking, we do not find any topological insulator phase in the presence of large Rashba spin-orbit coupling. When the exchange field is also turned on, the bilayer system exhibits a rich variety of topological phases including a quantum anomalous Hall phase, and we obtain the phase diagram as a function of the Rashba spin-orbit coupling, interlayer potential difference, and exchange field.
What problem does this paper attempt to address?