Abstract:Highlights • We demonstrate stable sub-60mV/dec subthreshold swing with hysteresis free I V in the NC-FeFET. • We directly trace intrinsic NC in the NC-FeFET to the suppressed polarization in ferroelectric heterostructure. • The NC-FeFET is highly flexible and robust under cyclic bending as well as extended heating. Negative capacitance (NC) has the potential to enable low power microelectronics beyond the fundamental thermionic limit, and it has been theorized that the thermodynamically unstable NC of ferroelectrics can be stabilized by linear dielectric, making negative capacitance ferroelectric field effect transistors (NC-FeFET) possible. Nevertheless, the validity of NC as a physical concept for ferroelectrics remain contentious despite numerous theoretical and experimental investigations, and the intrinsic ferroelectric NC with suppressed polarization has not been demonstrated except locally at vortex core. While NC-FeFET with subthreshold swing (SS) lower than 60 mV/dec limit has been reported, such device characteristics has not been directly connected to suppressed polarization at materials' level, and alternative mechanisms other than NC have also been proposed. Here we demonstrate stable sub-60 mV/dec SS with hysteresis free I V in NC-FeFET based on SrTiO 3 /Pb(Zr 0.1 Ti 0.9 )O 3 /SrTiO 3 heterostructure, and observe its suppressed polarization at both macroscopic and microscopic scales. The intrinsic ferroelectric NC thus is experimentally confirmed and directly connected to NC-FeFET performance, and the mica-based device is also highly flexible and robust under cyclic bending as well as extended heating. Graphical abstract Download : Download high-res image (266KB) Download : Download full-size image

Negative Capacitance Induced By Redistribution Of Oxygen Vacancies In The Fatigued Bifeo3-Based Thin Film

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

Strain engineering of ferroelectric negative capacitance in PbZr<sub>(1-<i>x</i>)</sub>Ti<sub><i>x</i></sub>O<sub>3</sub> thin films

Origin of the Enhanced Polarization in La and Mg Co-substituted BiFeO3 Thin Film during the Fatigue Process

Multiple factors of regulation for transient negative capacitance in PbZr(1-x)Ti(x)O3 ferroelectric thin films

The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors

Inhibition of Oxygen Vacancy Derived from Donor Doping in Relaxor Ferroelectric Films for Improving Dielectric Energy Storage

Mechanism of polarization fatigue in BiFeO 3

Observing suppressed polarization in flexible ferroelectric negative capacitance field effect transistors

Oxygen-vacancy-mediated Negative Differential Resistance in La and Mg co-substituted BiFeO3 Thin Film

Charge Injection and Polarization Fatigue in Ferroelectric Thin Films

Nonlinear Antiferroelectric-Like Capacitance-Voltage Curves in Ferroelectric Bifeo3 Thin Films

Mechanism of Polarization Fatigue in BiFeO3: the Role of Schottky Barrier

Polarization Fatigue Of Pr And Mn Co-Substituted Bifeo3 Thin Films

Physical Mechanism behind the Hysteresis-free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges

Observation of negative capacitance in antiferroelectric PbZrO3 Films

Complex Transport Behavior Accompanying Domain Switching in La0.1bi0.9feo3 Sandwiched Capacitors

The Effect of Polarization Fatigue Process and Light Illumination on the Transport Behavior of Bi0.9la0.1feo3 Sandwiched Capacitor

Tuning Negative Capacitance in PbZr0.2Ti0.8O3/Sr

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

Top-Interface-Controlled Fatigue Of Epitaxial Pb(Zr0.52ti0.48)O-3 Ferroelectric Thin Films On La0.7sr0.3mno3 Electrodes