Abstract:Through introducing Fc and PDI repeats into polymeric backbone, polymer P(DTPDI‐Fc) is designed to weaken stacking defects. P(DTPDI‐Fc) films show a regioregular molecular stacking and a continuous surface morphology, highly advantageous to the charge carriers inject and transport throughout P(DTPDI‐Fc) films. Therefore, P(DTPDI‐Fc) devices exhibit low ON‐state current, stable threshold voltage, long‐time stability, and high device reproducibility. Polymeric materials have been widely researched and used as active‐layers to fabricate data‐storage resistance random‐access memory (ReRAM) devices. Nevertheless, the problems as drift voltage, weak stability, and low reproducibility largely restrict their practical application in next‐generation memory systems, mainly induced by the molecular stacking defects that limited the efficient charge‐carrier migration throughout the active‐layers. Thus, how to weaken the molecular stacking defects and thus improve the overall ReRAM performance is a scientific issue that needs to be solved urgently. In this work, an organometallic polymer 5,12‐di(thiophen‐2‐l)‐2,9‐di(tridecan‐7‐yl)anthra[2,1,9‐def:6,5,10‐d'e'f']diisoquinoline‐1,3,8,10(2H,9H)‐tetraone P(DTPDI‐Fc) is designed with ferrocene (Fc) and perylenediimide (PDI) building repeats. The X‐ray diffraction (XRD) test confirms the regioregular stacking styles of P(DTPDI‐Fc) in solid states, and atomic force microscope (AFM) measurement verified the continuous and smooth surface morphology of P(DTPDI‐Fc) films. Therefore, the charge carriers can easily inject into P(DTPDI‐Fc) film and can efficiently migrate throughout P(DTPDI‐Fc) films. Thus, P(DTPDI‐Fc) devices show excellent memory behaviors with low high‐conductance state ON‐state current, stable threshold voltage, long‐time stability, and high device reproducibility. This work affords a practical strategy to weaken molecular stacking defects and to improve stacking regioregularity, which will give a guidance for the designing of multilevel data‐storage ReRAM devices in future researches.

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Structural effect on controllable resistive memory switching in donor–acceptor polymer systems

Conductivity Switching and Electronic Memory Effect in Polymers with Pendant Azobenzene Chromophores

Bulky Side Chain Effect of Poly(n‐vinylcarbazole)‐based Stacked Polymer Electrets on Device Performance Parameters of Transistor Memories

Design and synthesis of conjugated polymers containing Pt(ii) complexes in the side-chain and their application in polymer memory devices

Electrical Bistability and WORM Memory Effects in Donor–Acceptor Polymers Based on Poly(N‐vinylcarbazole)

Flash memory effects based on styrene/maleimiade copolymers with pendant azobenzene chromophores

Bi-stable State for WORM Application Based on Carbazole-containing Polymer

Electrical conductivity switching and memory effects in poly(N-vinylcarbazole) derivatives with pendant azobenzene chromophores and terminal electron acceptor moieties

Polymer Memories: Bistable Electrical Switching and Device Performance

Molecular Conformation-dependent Memory Effects in Non-conjugated Polymers with Pendant Carbazole Moieties

Thermally Stable Polymer Memory Devices Based on a Π-Conjugated Triad

A Conjugated Polymer Bearing Perylenediimide (PDI) and Ferrocene (Fc) Exhibiting Stable Data‐Storage Performance

Regulating WORM/Flash Electrical Memory Behavior of Metallopolymers Through Varying Metal Centers

Different Steric-Twist-Induced Ternary Memory Characteristics In Nonconjugated Copolymers With Pendant Naphthalene And 1,8-Naphthalimide Moieties

Light-/steam-driven Polymeric Crosslinking with Porous Multistructure Pattern for Ultrastable and Fast-Speed Memory

Improving the Electrical Memory Performance of Pyrazoline Moiety Via the Preparation of Its Hyperbranched Copolymer

Improving Resistive Switching Characteristics of Polyimide-Based Volatile Memory Devices by Introducing Triphenylamine Branched Structures

Synthesis and Morphology of Two Carbazole-Pyrazoline-Containing Polymer Systems and Their Electrical Memory Performance.

Rewritable and non-volatile memory effects based on polyimides containing pendant carbazole and triphenylamine groups

Memory devices based on functionalized copolymers exhibiting a linear dependence of switch threshold voltage with the pendant nitro-azobenzene moiety content change