The Effect of Nd Doping on Microstructure and Electrical Properties of BiFeO3 Thin Films

Gao Chen,Yang Jing,Meng Xiang-Jian,Bai Wei,Lin Tie,Sun Jing-Lan,Chu Jun-Hao
DOI: https://doi.org/10.3724/sp.j.1010.2012.00021
2012-01-01
JOURNAL OF INFRARED AND MILLIMETER WAVES
Abstract:The Nd doped BiFeO3 thin films are prepared on LaNiO3/Si (100) substrate by chemical solution deposition method. The results of x-ray diffraction show that the lattice constant of thin films decreases with the increase of Nd content. The impurity phases are found in the thin film with 20% Nd content. The results of dielectric measurement indicate that the dielectric constant and loss of thin films decrease with the increase of Nd content. A very strong dielectric frequency dispersion and relaxation of dielectric loss peak occurs in the thin film with 2% Nd content and it follows Debye-like law. The leakage current of thin films decreases with the increase of Nd content. The current transport follows SCLC model in low electric field region and follows Poole-Frenkel model in high electric field region. These results suggest that Nd doping has a strong influence on microstructure and electric properties of BiFeO3 thin films.
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