Abstract:Solution-processed organic field effect transistors (OFETs), which are amenable to facile large-area processing methods, have generated significant interest as key elements for use in all-organic electronic applications aimed at realizing low-cost, lightweight, and flexible devices. The low performance levels of n-type solution-processed bottom-contact OFETs unfortunately continue to pose a barrier to their commercialization. In this study, we introduced a combination of CVD-grown graphene source/drain (S/D) electrodes and fullerene (C60) in a solution-processable n-type semiconductor toward the fabrication of n-type bottom-contact OFETs. The C60 coating in the channel region was achieved by modifying the surface of the oxide gate dielectric layer with a phenyl group-terminated self-assembled monolayer (SAM). The graphene and phenyl group in the SAMs induced π-π interactions with C60, which facilitated the formation of a C60 coating. We also investigated the effects of thermal annealing on the reorganization properties and field-effect performances of the overlaying solution-processed C60 semiconductors. We found that thermal annealing of the C60 layer on the graphene surface improved the crystallinity of the face-centered cubic (fcc) phase structure, which improved the OFET performance and yielded mobilities of 0.055 cm(2) V(-1) s(-1). This approach enables the realization of solution-processed C60-based FETs using CVD-grown graphene S/D electrodes via inexpensive and solution-process techniques.

A High Mobility C-60 Field-Effect Transistor with an Ultrathin Pentacene Passivation Layer and Bathophenanthroline/Metal Bilayer Electrodes

Mobility Improvement in C60-Based Field-Effect Transistors Using LiF/Ag Source/Drain Electrodes

Influence of Polymer Dielectrics on C60-based Field-Effect Transistors

Mobility Improvement in C$_{60}$-Based Field-Effect Transistors Using LiF/Ag Source/Drain Electrodes

Mobility Improvement in C<sub>60</sub>-Based Field-Effect Transistors Using LiF/Ag Source/Drain Electrodes

Enhanced performance of field-effect transistors based on C 60 single crystals with conjugated polyelectrolyte

High performance pentacene organic field-effect transistors consisting of biocompatible PMMA/silk fibroin bilayer dielectric

High Mobility Pentacene/C-60-Based Ambipolar Otfts by Thickness Optimization of Bottom Pentacene Layer

Pentacene field-effect transistors with cheap electrode

Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing

High Performance Low-Voltage Organic Field-Effect Transistors Enabled by Solution Processed Alumina and Polymer Bilayer Dielectrics

High Performance Organic Field-Effect Transistor with Oxide/Metal Bilayer Electrodes

C60 Field-Effect Transistors Using a Polystyrene Gate Dielectric Layer

Low-voltage high-performance C60 thin film transistors via low-surface-energy phosphonic acid monolayer/hafnium oxide hybrid dielectric

Low-voltage p -channel, n -channel and ambipolar organic thin-film transistors based on an ultrathin inorganic/polymer hybrid gate dielectric layer

Increased Mobility And On/Off Ratio In Organic Field-Effect Transistors Using Low-Cost Guanine-Pentacene Multilayers

Effect of organic buffer layers on the performance of n-type organic field-effect transistor based on C 60 active layer

Enhancement of Memory Properties of Pentacene Field-Effect Transistor by the Reconstruction of an Inner Vertical Electric Field with an N-Type Semiconductor Interlayer.

High-mobility flexible pentacene-based organic field-effect transistors with PMMA/PVP double gate insulator layers and the investigation on their mechanical flexibility and thermal stability

Performance improvement of pentacene organic field-effect transistor through introducing polymer buffer layers

Enhanced Mobility in Organic Field-Effect Transistors Due to Semiconductor/dielectric Interface Control and Very Thin Single Crystal