Polymer white light-emitting diodes with p-type Si anode and nanometer-thick polycrystalline p-Si anode

Yongtao Gu,Feng Wei,Tuo Sun,Wanjin Xu,Guangzhao Ran,Yong Zhang,Qiaoli Niu,Guogang Qin
2012-01-01
Abstract:Polymer white light-emitting diodes (PWLEDs) with p-type Si and nanometer-thick (~10 nm) polycrystalline p-Si anode are reported. The structures of the PWLEDs are Si anodes/PEDOT:PSS/MEH-PPV:PFO/Cs 2CO 3/Sm/Au. PWLEDs are optimized by adjusting the mixture of MEH-PPV and PFO as the active polymer layer. It is found that when MEH-PPV is 0.13%, the PWLEDs show white emission with CIE coordinates of (0.372, 0.391). The optimized p-Si anode resistivity of the PWLEDs is investigated. When the resistivity of p-Si is 0.079 Ω·cm, a maximum currency efficiency of 0.191 cd/A and a power efficiency of 0.131 lm/W are obtained. Furthermore, polycrystalline p-Si anode is optimized by adopting various thickness of the Ni layer, the maximum currency efficiency and power efficiency are raised to 0.371 cd/A and 0.187 lm/W respectively when the thickness of Ni layer is 2 nm. In comparasion with PWLEDs with p-Si anode, the maximum efficiency has raised 94% and 43% respectively. © 2012 Peking University.
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