Abstract:In order to solve the pressure measurement problem in the harsh environment, a piezoresistive pressure sensor has been developed, which can be used under high temperature above 200°C and is able to endure instantaneous ultra high temperature (2000°C, duration≦2s) impact. Based on the MEMS (Micro Electro-Mechanical System) and integrated circuit technology, the piezoresistive pressure sensor's sensitive element was fabricated and constituted by silicon substrate, a thin buried silicon dioxide layer, four p-type resistors in the measuring circuit layer by boron ion implantation and photolithography, the top SiO2 layer by oxidation, stress matching Si3N4 layer, and a Ti-Pt-Au beam lead layer for connecting p-type resistors by sputtering. In order to decrease the leak-current influence to sensor in high temperature above 200°C, the buried SiO2 layer with the thickness 367 nm was fabricated by the SIMOX (Separation by Implantation of Oxygen) technology, which was instead of p-n junction to isolate the upper measuring circuit layer from Si substrate. In order to endure instantaneous ultra high temperature impact, the mechanical structure with cantilever & diaphragm and transmitting beam was designed. By laser welding and high temperature packaging technology, the high temperature piezoresistive pressure sensor was fabricated with range of 120MPa. After the thermal compensation, the sensor's thermal zero drift k0 and thermal sensitivity drift ks were easy to be less than 3×10−4FS/°C. The experimental results show that the developed piezoresistive pressure sensor has good performances under high temperature and is able to endure instantaneous ultra high temperature impact, which meets the requirements of modern industry, such as aviation, oil, engine, etc.

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