A simple capacitor model and first-principles study of carbon-doped zigzag ZnO nanoribbons

Yanzong Wang,Baolin Wang,Qinfang Zhang,Daning Shi,Seiji Yunoki,Fanjie Kong,Ning Xu
DOI: https://doi.org/10.1016/j.ssc.2011.12.035
IF: 1.934
2012-01-01
Solid State Communications
Abstract:Using density-functional-theory calculations, we study electronic and magnetic properties of zigzag ZnO nanoribbons (ZZnONRs) with a single carbon atom substituting O. We find that the formation energy of carbon dopant depends strongly on the position: the carbon atom doped close to O edge is most favorable energetically for H-passivated ZZnONRs, whereas the doped carbon atom prefers to locate near Zn edge on bare ZZnONRs. These features are explained using a simple capacitor model. We also find that the substitutional carbon defect induces spontaneous magnetization and manipulates the electronic properties of ZZnONRs, independent of the ribbon width (N). In particular, H-passivated N-ZZnONRs (4<N<9) exhibit two successive transitions from semiconductor to metal via half-metal as the doping proceeds gradually from O edge to Zn edge.
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