Abstract:A cryogenic broadband low noise amplifier (LNA) for quantum applications based on a standard 40-nm CMOS technology is reported. The LNA specifications are derived from the readout of semiconductor quantum bits at 4.2 K, whose quantum information signals are characterized as phase-modulated signals. To achieve broadband input matching impedance and low noise figure, the gate-to-drain capacitance of the input transistor is exploited. The goal is to involve a resistive and capacitive load into the input impedance match of a common-source stage with source inductive degeneration. The capacitive load is created by an LC parallel tank whose resonant frequency is lower than the operating frequency. The achieved non-constant in-band equivalent capacitance is proven to be beneficial to input impedance matching. The resistive part of the load is provided by the transconductance of the cascode stage implicitly. An inductor is added to the gate of the cascode transistor to suppress its noise, and a transformer-based resonator with two resonant frequencies serves as the load of the first stage, thus extending the operating bandwidth. Design considerations for the cryogenic temperature operation of the LNA are proposed and analyzed. The LNA achieves a measured gain ( $S_{21}$ ) of 35 ± 0.5 dB, return loss > 12 dB, and NF of 0.75–1.3 dB across the band (4.1–7.9 GHz), with 51.1-mW power consumption at room temperature, while it shows a measured gain of 42 ± 3.3 dB, and NF of 0.23–0.65 dB with 39-mW power consumption at 4.2 K between 4.6 and 8 GHz. To the best of our knowledge, this is the first report of a cryogenic LNA based on a bulk CMOS process working above 4 GHz showing sub-1-dB NF both at room and cryogenic temperatures.

Research on Cryogenic Behaviors of Low Noise Amplifier with Build-In Pin Diode Limiter

Design And Fabrication Of Cryogenic Low Noise Amplifier In Low Rf Band

Design and Measurement of P Band Cryogenic Low Noise Step Amplifier

Characteristics Of Low Noise 800mhz Amplifier At Cryogenic Temperature

Cryogenic low noise amplifier with output trap circuit for P Band

Analysis And Design Of Inductorless Wideband Low-Noise Amplifier With Noise Cancellation Technique

A Wideband BiCMOS Thermal Noise Canceling Low Noise Amplifier with Temperature Compensation

A DESIGN OF Ku-BAND CRYOGENIC LOW-NOISE AMPLIFIER

A Compact 2.1–39 GHz Self-Biased Low-Noise Amplifier in 65 Nm CMOS Technology

A 11.2 Mw 48–62 GHz Low Noise Amplifier in 65 Nm CMOS Technology

A 47K Noise Temperature CMOS S-band LNA for Cryogenic Applications

Cryogenic Low Noise Amplifier for VHF Band Applied in Superconducting Filter

A 0.32 $\times$ 0.12 mm$^{2}$ Cryogenic BiCMOS 0.1–8.8 GHz Low Noise Amplifier Achieving 4 K Noise Temperature for SNWD Readout

Technologies, Design, and Applications of Low-Noise Amplifiers at Millimetre-Wave: State-of-the-Art and Perspectives

Cryogenic Modeling of GaAs-pHEMT and its Application in Low-power MMIC CLNA Design for Radio Astronomy

Development of cryogenically-cooled low noise amplifier for mobile base station receivers

Novel Integrated Ka-Band Amplitude Limiting Low Noise Amplifier Design

Ultra Wideband 43 GHz Preamplifier with up to 60 dB adjustable Gain for accurate Noise Figure Measurement of Cryogenic LNAs

A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applications

0.75ghz-1.75ghz Sige Lna For Cryogenic Application

0.5-8.5 GHz Cryogenic Low Power Consumption Amplifiers for Superconducting SIS Mixer-based Water Vapour Radiometer Applications