Direct Growth of Few-Layer Graphene Films on Sio2 Substrates and Their Photovoltaic Applications

Hui Bi,Shengrui Sun,Fuqiang Huang,Xiaoming Xie,Mianheng Jiang
DOI: https://doi.org/10.1039/c1jm14778a
2012-01-01
Journal of Materials Chemistry
Abstract:We first demonstrate the use of few layer graphene films directly grown on SiO2 substrates obtained by ambient pressure chemical vapor deposition (APCVD) as counter electrodes in dye-sensitized solar cells (DSSCs). The layer number and crystal size of graphene films can be tuned by changing growth temperature, growth time and gas flow ratio (CH4 : H-2). The continuous graphene films exhibit extremely excellent electrical transport properties with a sheet resistance of down to 63.0 Omega sq(-1) and extremely high mobility of up to 201.4 cm(2) v(-1) s(-1). The highly conductive graphene films as counter electrodes of DSSCs achieve a photovoltaic efficiency of 4.25%, which is comparable to the DSSC efficiency (4.32%) based on FTO counter electrodes. Our work indicates the great potential of CVD graphene films directly grown on dielectric substrates for photovoltaic and electronic applications.
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