Abstract:The nanopatterned structures play an important role in enhancing the light extraction efficiency (LEE) of GaN-based light-emitting diodes (LEDs). Three-dimensional finite-difference time-domain (3D-FDTD) method was carried out to calculate the LEE enhancement of GaN-based LEDs designed on periodic nanostructures with different geometries. Orthogonal experiment method was employed to obtain the optimal structure parameters and analyze the weighting factor of critical parameters affecting the LEE enhancement. The results of orthogonal experiment showed that the height/depth of the periodic nanostructures is the dominated factor to influence the LEE enhancement, followed by the diameter and the spacing of the periodic nanostructures. It was also found that the far-field intensities of LEDs with periodic convex nanostructures were stronger than those with periodic concave nanostructures. The critical parameters of periodic convex nanostructures were further optimized by single factor method, and their optimal parameters were obtained. The optimal LEE enhancement of GaN-based LEDs grown on cone-shaped nanopillar and column-shaped nanopillar array patterned sapphire substrates are 1.95 and 1.97, respectively. This means the cone-shaped and column-shaped nanopillar structures have almost identical LEE enhancement of GaN-based LEDs.

Improvement of Light Extraction Efficiency of GaN-based Flip-Chip Light-Emitting Diodes by Patterning the Double Sides of Sapphire

Design of patterned sapphire substrates for GaN-based light-emitting diodes

Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching

Analyses of Light Extraction Efficiency in GaN‐based LEDs Grown on Patterned Sapphire Substrates

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

Parameters optimization of nanopatterned sapphire substrates for enhancing light extraction efficiency of GaN-based LEDs

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off

Light extraction enhancement of light-emitting diodes by nanopillar hierarchical structures

Improvement of Light Extraction from Patterned Polymer Encapsulated Gan-Based Flip-Chip Light-Emitting Diodes by Imprinting

A Precise Ray Tracing Simulation Model for GaN Based Light Emitting Diodes

Suppressing optical crosstalk for GaN/InGaN based flip-chip micro light-emitting diodes by using an air-cavity patterned sapphire substrate as a light filter

Light Extraction Improvement from GaN-Based Light-Emitting Diodes with Nano-Patterned Surface Using Anodic Aluminum Oxide Template

Improvement of Surface Light Extraction from Flip‐chip GaN‐based LED by Embossing of Thermosetting Polymers

Enhancement of Light Extraction from Microstructured GaN-Based Light Emitting Diodes by Technique of Nanoimprint

Dual enhancement of light extraction efficiency of flip-chip light-emitting diodes with multiple beveled SiC surface and porous ZnO nanoparticle layer coating

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Study of Defect and Spectral Characteristics of Light Emitting Diodes with Multiple InGaN/GaN Quantum Wells on Patterned Sapphire Substrates

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

Light Extraction Improvement of Gan-Based Light Emitting Diodes Using Patterned Undoped Gan Bottom Reflection Gratings

Study on Light Extraction Efficiency of GaN-based Light-emitting Diode Chips