Abstract:The traditional Boolean computing paradigm based on the von Neumann architecture is facing great challenges for future information technology applications such as big data, the Internet of Things (IoT), and wearable devices, due to the limited processing capability issues such as binary data storage and computing, non-parallel data processing, and the buses requirement between memory units and logic units. The brain-inspired neuromorphic computing paradigm is believed to be one of the promising solutions for realizing more complex functions with a lower cost. To perform such brain-inspired computing with a low cost and low power consumption, novel devices for use as electronic synapses are needed. Metal oxide resistive random access memory (ReRAM) devices have emerged as the leading candidate for electronic synapses. This paper comprehensively addresses the recent work on the design and optimization of metal oxide ReRAM-based synaptic devices. A performance enhancement methodology and optimized operation scheme to achieve analog resistive switching and low-energy training behavior are provided. A three-dimensional vertical synapse network architecture is proposed for high-density integration and low-cost fabrication. The impacts of the ReRAM synaptic device features on the performances of neuromorphic systems are also discussed on the basis of a constructed neuromorphic visual system with a pattern recognition function. Possible solutions to achieve the high recognition accuracy and efficiency of neuromorphic systems are presented.

A neuromorphic visual system using RRAM synaptic devices with Sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling

RRAM based synaptic devices for neuromorphic visual systems

Optoelectronic resistive random access memory for neuromorphic vision sensors

A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation.

Neuromorphic Computing Based on Resistive RAM.

Metal Oxide Resistive Random Access Memory Based Synaptic Devices for Brain-Inspired Computing

Device and circuit optimization of RRAM for neuromorphic computing

Analog‐Type Resistive Switching Devices for Neuromorphic Computing

A Spike Neuron Network Prototype Based on RRAM Array

Full hardware implementation of neuromorphic visual system based on multimodal optoelectronic resistive memory arrays for versatile image processing

Modeling-Based Design of Memristive Devices for Brain-Inspired Computing

A Novel Neuromorphic Hardware Using Area-Efficient Chain RRAM-Based Synapses and Compact Neurons with (Anti-) Integration Scheme

A Compact Model of Analog RRAM With Device and Array Nonideal Effects for Neuromorphic Systems

A Compact Model of Analog RRAM for Neuromorphic Computing System Design

Modeling of Gate Tunable Synaptic Device for Neuromorphic Applications

33.1 A 74 TMACS/W CMOS-RRAM Neurosynaptic Core with Dynamically Reconfigurable Dataflow and In-situ Transposable Weights for Probabilistic Graphical Models.

Optoelectronic Stimuli-Driven Switchable Memristor with Multilevel Resistance States for Neuromorphic Vision Sensors

Design and Hardware Implementation of Neuromorphic Systems with RRAM Synapses and Threshold-Controlled Neurons for Pattern Recognition.

Device and Materials Requirements for Neuromorphic Computing

The Characteristics of Binary Spike-Time-Dependent Plasticity in HfO 2 -Based RRAM and Applications for Pattern Recognition

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application