Annealing effects on W-doped VO 2 thin films prepared from magnetron sputtering

Shuang Chen,Cuizhi Dong,Lifang Zhang,Zhiming Yu
DOI: https://doi.org/10.4028/www.scientific.net/AMR.538-541.101
2012-01-01
Abstract:W-doped VO2 thin films were prepared by magnetron sputtering after annealing in vacuum. The structure, morphology, infrared transmittance and phase transition were characterized by X-ray diffiactometer, atomic force microscopy(AFM), infrared spectrometer (IR) and differential thermal analysis(DTA), respectively. The results show that after vacuum annealing at 500 degrees C for 2h, the major phase of W doped films is VO2. Dopant reduce the phase transition temperature of VO2 thin films to 21.9 degrees C.
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