Preparation and electrical properties of Bi 0.9Nd 0.1Fe 0.925Mn 0.075O 3 thin films

Yan Ning,Yang Sheng-hong,Zhang Yue-li,n yan,s h yang
DOI: https://doi.org/10.4028/www.scientific.net/AMR.557-559.1933
2012-01-01
Abstract:Pure BiFeO3 (BFO) and Bi0.9Nd0.1Fe0.925Mn0.075O3 (BNFM) thin films were deposited on Pt(111)/Ti/Si02/Si substrate by sol-gel method. X-ray diffraction analysis showed that all the films were single perovskite structure and a phase transition appeared in Nd Mn codoped BiFeO3 thin films. Electrical measurements indicated that the ferroelectric properties of BFO thin films were significantly improved by Nd and Mn codoping. BNFM films exhibit a low leakage current and a good P-E hysteresis loop. The remanent polarization (Pr) value of 74 mu C/cm(2) has been obtained in BNFM films, while the coercive field (Ec) is 184kV/cm.
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