N-type colloidal-quantum-dot solids for photovoltaics.

David Zhitomirsky,Melissa Furukawa,Jiang Tang,Philipp Stadler,Sjoerd Hoogland,Oleksandr Voznyy,Huan Liu,Edward H Sargent
DOI: https://doi.org/10.1002/adma.201202825
2012-01-01
Abstract:N-type PbS colloidal-quantum-dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm(2) V(-1) s(-1) . The halogen ions serve both as a passivating agent and n-dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 10(16) to 10(18) cm(-3) is varied systematically.
What problem does this paper attempt to address?