Design of X-band oscillator based on substrate integrated circular cavity

Qiang Liu,Yang Yang,Kama Huang
DOI: https://doi.org/10.1109/ICMMT.2012.6229999
2012-01-01
Abstract:Based on the substrate integrated circular cavity (SICC), a novel X-band dielectric resonator oscillator is developed. Owing to the high quality factor and planar structure of the SICC, the advantages of our proposed oscillator consist of low phase noise, small size, low cost, and planar integration. In this paper, the series reflection type is selected as the topology of our proposed oscillator and the oscillator is analyzed with the concept of negative resistance. The oscillator performance is characterized by an output power of 8.5dBm at 8.41 GHz and the measured phase noise is -119.67 dBc/Hz at 10 kHz offset.
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