Preparation of Nd and Co Co-Doped BiFeO3 Thin Films Co-Doping Nd and Co by Sol-Gel Method

Xu Xue,Guoqiang Tan,Huijun Ren,Meng Cheng

DOI: https://doi.org/10.4028/www.scientific.net/kem.512-515.1249

2012-01-01

Key Engineering Materials

Abstract:BiFeO3 thin films co-doping Nd and Co were prepared on FTO/glass substrate by sol-gel method with Bi(NO3)3•5H2O, Fe•(NO3)3•9H2O, Nd(NO3)3•6H2O and Co(NO3)2•6H2O as raw materials, 2-methoxyethanol together with acetic anhydride as a solvent. XRD, FE-SEM, Agilent E4980A Precision LCR Meter and TF 2000 Ferroelectric Analyzer were used to characterize the structure, morphology, dielectric property and ferroelectric property of the BiFeO3 thin films. The results show that after Nd and Co co-doping, the BiFeO3 thin films still keep the perovskite structure. The crystal structure turns square or orthogonal from rhombus. The thickness of the BiFeO3 thin films is about 500nm and the grain size is 80nm to 30nm. BiFeO3 thin films co-doping Nd and Co have the larger dielectric constant and the lower dielectric loss compared with Nd doping. BiFeO3 thin films co-doping Nd10% and Co1% have the dielectric constant of over 170 and the dielectric loss of below 0.03. Both have the better frequency stability. Co-doping Nd and Co could decrease the coercive electric field of BiFeO3 thin films.