Preparation and Ultraviolet Photoresponse of In2Ge2O7 Thin Films

冯琳,褚夫同,唐永旭,李瑶,刘兴钊

2012-01-01

Abstract:In2Ge2O7 thin film was prepared by carbothermal reduction method using In2O3 and GeO2 as raw materials.The properties were characterized by XRD,SEM.The characteristics of the In2Ge2O7 thin film based metal-semiconductor-metal（MSM） photodetectors show that the photo current was 727 μA and the dark current was 12 μA）,and a high responsivity of 262.9 A·W^-1 was achieved under 5 V bias when it was irradiated by the ultraviolet light（λ=250 nm）.The device show a slow time response with a rise time of 67 s and a decay time of 15 s.The authors deduced the slow time response was caused by the defect traps in the film.The preliminary results show that the In2Ge2O7 thin film is a promising candidate for the solar-blind photodetectors.