Achieving an Efficient La3Si8N11O4: Eu2+ Phosphor Via Chemical Reduction of Nano-Scale Carbon Film: Toward White Light-Emitting Diodes
Sheng-Hui Zhang,Hong-Ren Chen,Chao Cai,Zhong-Wei Zhang,Yu-Jie Zhao,Li Zhang,Xin Wang,Lin-Bo Zhang,Xin Xu,Hao Van Bui,Liang-Jun Yin
DOI: https://doi.org/10.1016/j.jallcom.2019.05.310
IF: 6.2
2019-01-01
Journal of Alloys and Compounds
Abstract:In this work, Eu-doped La3Si8N11O4 phosphors with different doping concentrations are fabricated by solid state reaction method. A broad and asymmetric emission band that covers the wavelength range of 425-550 nm is observed. X-ray diffraction Rietveld refinement and X-ray absorption near edge structure (XANES) analyses reveal the co-existence of both trivalent and divalent states of Eu. By coating the phosphor particles with an ultrathin carbon layer using CVD technique, followed by an annealing in N-2 at 1600 degrees C, the trivalent ions Eu3+ are reduced to Eu2+, resulting in a significant enhancement of quantum efficiency, both internal and external, and absorption efficiency. The application of the La3Si8N11O4:Eu in white light-emitting diodes is tested by coating the phosphor onto a near-UV LED chip in combination with the red-, green- and blue-emitting phosphors ([Ca, Sr]AlSiN3:Eu, (R)-Sialon:Eu and BaMgAl10O17:Eu, respectively). It is demonstrated that the presence of the La3Si8N11O4:Eu phosphor significantly enhances the color rendering index of the device, showing its great potential for wLEDs applications. (C) 2019 Elsevier B.V. All rights reserved.